Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

Applied Physics Letters

Volumn 78, Issue 16, 2001, Pages 2357-2359

  Perkins, Charles M ^a   Triplett, Baylor B ^a   McIntyre, Paul C ^a   Saraswat, Krishna C ^a   Haukka, Suvi ^b   Tuominen, Marko ^b  

^a Stanford University   (United States)

^b ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035896875     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1362331     Document Type: Article

References (10)

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