(Ba,Sr)TiO3 thin films for ultra large scale dynamic random access memory. a review on the process integration

Materials Science and Engineering B

Volumn 56, Issue 2-3, 1998, Pages 178-190

  Hwang, Cheol Seong ^a,b  

^a SAMSUNG Electronics   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

(Ba,Sr)TiO3; Deposition; DRAM; Electrodes; Integration

Indexed keywords

EID: 0001094776     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00233-5     Document Type: Article

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