Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Hwang, Soo Min ^a   Lee, Seung Muk ^a   Park, Kyung ^a   Lee, Myung Soo ^a   Joo, Jinho ^a   Lim, Jun Hyung ^a   Kim, Hyoungsub ^a   Yoon, Jae Jin ^b   Kim, Young Dong ^b  

^a Sungkyunkwan University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; COMBINED EFFECT; DIELECTRIC LAYER; ELECTRICAL PERFORMANCE; ELECTRICAL PROPERTY; GATE-LEAKAGE CURRENT; INTERFACIAL LAYER; K-VALUES; NANO SCALE; ORGANIC COMPONENTS; SI FILMS; SI(1 0 0); SOL-GEL TECHNIQUE;

ELECTRIC PROPERTIES; GELS; LEAKAGE CURRENTS; MICROSTRUCTURAL EVOLUTION; SILICON; SOL-GEL PROCESS; SOL-GELS; SOLS;

ZIRCONIUM ALLOYS;

EID: 78751562506     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3541784     Document Type: Article

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