Thickness dependence of the structural and dielectric properties of epitaxial ZrO2 films grown by limited reaction sputtering

Journal of Physics D: Applied Physics

Volumn 42, Issue 20, 2009, Pages

  Zhou, Y ^a   Sasaki, K ^a   Kawae, T ^a   Morimoto, A ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; ELECTRICAL CONDUCTION; FAST RELAXATION; FLATBAND SHIFT; FREQUENCY DISPERSION; GROWTH STAGES; HIGH ELECTRIC FIELDS; HIGH PERMITTIVITY; INTERFACE STATE DENSITY; POSITIVE CHARGES; SCHOTTKY EMISSIONS; SI(1 0 0); SPUTTERING TECHNIQUES; THICKNESS DEPENDENCE;

DIELECTRIC PROPERTIES; ELECTRIC FIELDS; LATTICE MISMATCH; OXYGEN VACANCIES; OZONE; ZIRCONIUM ALLOYS;

EPITAXIAL GROWTH;

EID: 70350651118     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/20/205406     Document Type: Article

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