Impact of O3 feeding time on TiO2 films grown by atomic layer deposition for memory capacitor applications

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Kim, Seong Keun ^b   Lee, Sang Young ^b   Seo, Minha ^b   Choi, Gyu Jin ^b   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; CURRENT DENSITY; ELECTRIC PROPERTIES; FILM GROWTH; LEAKAGE CURRENTS; OZONE; SURFACE ROUGHNESS;

CHEMICAL STATE; FEEDING TIME; MEMORY CAPACITOR APPLICATIONS;

TITANIUM OXIDES;

EID: 34547566586     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2757008     Document Type: Article

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