Highly conformal ZrO2 deposition for dynamic random access memory application

Journal of Applied Physics

Volumn 90, Issue 6, 2001, Pages 2964-2969

  Chang, Jane P ^a   Lin, You Sheng ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035883789     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1389756     Document Type: Article

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