Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Jegert, Gunther ^a   Kersch, Alfred ^b   Weinreich, Wenke ^c   Lugli, Paolo ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b MUNICH UNIVERSITY OF APPLIED SCIENCES   (Germany)

^c Fraunhofer Center Nanoelectronic Technologies   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CONDUCTION BAND OFFSET; DOWN-SCALING; DYNAMIC RANDOM ACCESS MEMORY; EQUIVALENT OXIDE THICKNESS; FILM SMOOTHNESS; FRACTAL GEOMETRY; KINETIC MONTE CARLO; POOLE-FRENKEL CONDUCTION; THICKNESS FLUCTUATIONS; THIN-FILM CAPACITORS; TRANSPORT MECHANISM; TRANSPORT MODELS; TRAP ASSISTED TUNNELING;

CAPACITORS; DEFECT DENSITY; DEFECTS; DIELECTRIC FILMS; ELECTRON MOBILITY; FRACTALS; HETEROJUNCTIONS; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS; THIN FILM CIRCUITS; THREE DIMENSIONAL; TITANIUM NITRIDE;

ELECTROLYTIC CAPACITORS;

EID: 78751472798     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3531538     Document Type: Article

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