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Journal of the Electrochemical Society

Volumn 158, Issue 6, 2011, Pages

Effect of Y, Gd, Dy, and Ce doping on the microstructural and electrical properties of sol-gel-deposited ZrO2 film

(5) Lee, Myung Soo a An, Chee Hong a Park, Kyung a Choi, Ju Yun a Kim, Hyoungsub a

a Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CE-DOPING; DIELECTRIC CONSTANTS; DOPANT EFFECTS; DY DOPING; ELECTRICAL PROPERTY; ELECTRON TRAPPING; HIGH TEMPERATURE PHASE; HYSTERESIS CHARACTERISTICS; LOW TEMPERATURE ANNEALING; MICRO-STRUCTURAL; SOL-GEL TECHNIQUE; VALENCE NUMBER;

ATOMS; DIELECTRIC PROPERTIES; GADOLINIUM; GELS; HYSTERESIS; OXYGEN; OXYGEN VACANCIES; SOL-GEL PROCESS; SOL-GELS; SOLS; STABILIZATION; ZIRCONIUM; ZIRCONIUM ALLOYS;

SEMICONDUCTOR DOPING;

EID: 79955530121 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3562971 Document Type: Article

Times cited : (10)

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