A physical model for the hysteresis phenomenon of the ultrathin ZrO 2 film

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3936-3940

  Wang, J C ^a   Chiao, S H ^a   Lee, C L ^a   Lei, T F ^a   Lin, Y M ^b   Wang, M F ^b   Chen, S C ^b   Yu, C H ^b   Liang, M S ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS-TEMPERATURE STRESS; CAPACITANCE VOLTAGE CHARACTERISTIC; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; EFFECTIVE OXIDE THICKNESS; HYSTERESIS PHENOMENON; INNER-INTERFACE; LIGHT ILLUMINATION; MOBILE ION EFFECTS; PHYSICAL MODEL; THICKNESS EFFECT; TURN-AROUNDS; ULTRA-THIN; WORK STUDY;

DIELECTRIC MATERIALS; IONIC CONDUCTION; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

INTERFACES (MATERIALS);

EID: 18644361821     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498964     Document Type: Article

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