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Volumn 410, Issue 1-2, 2002, Pages 53-60

Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon

(8) Kukli, Kaupo a,b Ritala, Mikko b Uustare, Teet a Aarik, Jaan a Forsgren, Katarina c Sajavaara, Timo b Leskelä, Markku b Hårsta, Anders c

a UNIVERSITY OF TARTU (Estonia)

b UNIVERSITY OF HELSINKI (Finland)

c UPPSALA UNIVERSITY (Sweden)

Author keywords

Atomic layer deposition; Dielectrics; Metal oxide semiconductor structure (MOS); Zirconium oxide

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; FILM GROWTH; HYSTERESIS; LATTICE CONSTANTS; MOS DEVICES; PERMITTIVITY; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

ATOMIC LAYER DEPOSITION;

ZIRCONIA;

EID: 0036574786 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(02)00272-9 Document Type: Article

Times cited : (39)

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