Nanoionics-based resistive switching memories

Nature Materials

Volumn 6, Issue 11, 2007, Pages 833-840

  Waser, Rainer ^a,b   Aono, Masakazu ^c,d  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; FLASH MEMORY; MIM DEVICES; REDOX REACTIONS; SWITCHING NETWORKS; TRANSITION METAL COMPOUNDS;

ION MIGRATION EFFECTS; MOLECULAR SWITCHING SYSTEMS; NANOIONICS; RESISTIVE SWITCHING MEMORIES;

NONVOLATILE STORAGE;

EID: 35748974883     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2023     Document Type: Article

References (86)

1. Hickmott, T. W. Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys. 33, 2669-2682 (1962).
2. Dearnaley, G., Stoneham, A. M. & Morgan, D. V. Electrical, phenomena in amorphous oxide films. Rep. Prog. Phys. 33, 1129-1191 (1970).
3. Oxley, D. P. Electroforming, switching and memory effects in oxide thin films. Electrocomponent Sci. Technol. UK 3, 217-224 (1977).
4. Pagnia, H. & Sotnik, N. Bistable switching in electroformed metal-insulator-metal devices. Phys. Status Solidi 108, 11-65 (1988).
5. Asamitsu, A., Tomioka, Y., Kuwahara, H. & Tokura, Y. Current switching of resistive states in magnetoresistive manganites. Nature 388, 50-52 (1997).
6. Kozicki, M. N., Yun, M., Hilt, L. & Singh, A. Applications of programmable resistance changes in metal-doped chalcogenides. Pennington NJ USA: Electrochem. Soc. 298-309 (1999).
7. Beck, A., Bednorz, J. G., Gerber, C., Rossel, C. & Widmer, D. Reproducible switching effect in thin oxide films for memory applications. Appl Phys. Lett. 77, 139-141 (2000).
8. Chudnovskii, F. A., Odynets, L. L., Pergament, A. L. & Stefanovich, G. B. Electroforming and switching in oxides of transition metals: the role of metal-insulator transition in the switching mechanism. J. Solid State Chem. 122, 95-99 (1996).
9. Bruyere, J. C. & Chakraverty, B. K. Switching and negative resistance in thin films of nickel oxide. Appl. Phys. Lett. 16, 40-43 (1970).
10. Kim, D. C. et al. Electrical observations of filamentary conductions for the resistive memory switching in NiO films. Appl. Phys. Lett. 88, 202102 (2006).
11. 2 thin films grown by atomic-layer deposition. J. Appl. Phys. 98, 033715 (2005).
12. Baek, I. G. et al. Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses. IEDA Tech. Digest, 587-590 (2005).
13. Jeong, D. S., Schroeder, H. & Waser, R. Coexistence of bipolar and unipolar resistive switching behaviors. Electrochem. Solid-State Lett. 10, G51-G53 (2007).
14. Simmons, J. G. Sc Verderber, R. R. New conduction and reversible memory phenomena in thin insulating films. Proc. R. Soc. Lond. A 301, 77-102 (1967).
15. Ouyang, J. Y., Chu, C. W., Sziuanda, C. R., Ma, L. P. & Yang, Y. Programmable polymer thin film and non-volatile memory device. Nature Mater. 3, 918-922 (2004).
16. Bozano, L. D. et al. Organic materials and thin-film structures for cross-point memory cells based on trapping in metallic nanoparticles. Adv. Fund. Mater. 15, 1933-1939 (2005).
17. Guan, W. et al. Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide. J. Phys. D 40, 2754-2758 (2007).
18. Sawa, A., Fujii, T., Kawasaki, M. & Tokura, Y. Interface resistance switching at a few nanometer thick perovskite manganite active layers. Appl. Phys. Lett. 88, 232112 (2006).
19. 3. Appl. Phys. Lett. 86, 012107 (2005).
20. Lee, D. et al. in Proc. Non- Volatile Memory Technology Symposium (ed. Campbell, K.) 89-93 (IEEE, Piscataway, New Jersey, 2006).
21. Hovel, H. J. & Urgell, J. J. Switching and memory characteristics of ZnSe-Ge heterojunctions. J. Appl. Phys. 42, 5076-5083 (1971).
22. Fors, R, Khartsev, S. I. & Grishin, A. M. Giant resistance switching in metal-Insulator-manganite junctions: evidence for Mott transition. Phys. Rev. B 71, 045305 (2005).
23. 3/Pt sandwich structure: evidence for a Mott transition. Phys. Rev. B 74, 174430 (2006).
24. Meijer, G. I. et al. Valence states of Cr and the insulator-to-metal transition in Cr-doped SrTiO3. Phys. Rev. B 72, 155102 (2005).
25. Rozenberg, M. J., Inoue, I. H. & Sanchez, M. J. Nonvolatile memory with multilevel switching: a basic model. Phys. Rev. Lett. 92, 178302 (2004).
26. Rozenberg, M. J., Inoue, I. H. & Sanchez, M. J. Strong electron correlation effects in nonvolatile electronic memory devices. Appl. Phys. Lett. 88, 033510 (2006).
27. Esaki, L., Laibowltz, R. B. & Stiles, P. J. Polar Switch. IBM Tech. Discl. Bull. 13, 2161 (1971).
28. Kohlstedt, H., Pertsev, N. A., Contreras, J. R. & Waser, R. Theoretical, current-voltage characteristics of ferroelectric tunnel junctions. Phys. Rev. B 72, 1, 25341, (2005).
29. Tsymbal, E. Y. & Kohlstedt, H. Tunneling across a ferroelectric. Science 313, 181-183 (2006).
30. Waser, R. Nanoelectronics and Information Technology 2nd edn (Wiley-VCH, Wemheim, 2003).
31. Maler, J. Nanoionics: ion transport and electrochemical storage in confined systems. Nature Mater. 4, 805-818 (2005).
32. Terabe, K., Hasegawa, T., Nakayama, T. & Aono, M. Quantized conductance atomic switch. Nature 433, 47-50 (2005).
33. Ercker, L. Treatise on Ores and Assaying (1547) (transl. Siseo, A. G. & Smith, C. S., Univ. Chicago, 1951), p. 177.
34. Faraday, M. Phil. Trans. R. Soc. Lond. 123, 507-522 (1833).
35. Wagner, C. Physical chemistry of ionic crystals involving small concentrations of foreign substances. J. Phys. Chem., 57, 738-742 (1953).
36. 3 films. J. Appl Phys. 47, 2767-2772 (1976).
37. Tamura, T. et al. Switching property of atomic switch controlled by solid electrochemical reaction. Jpn. J. Appl. Phys. 45, L364-L366 (2006).
38. Kaeriyama, S. et al. A nonvolatile programmable solid-electrolyte nanometer switch. IEEE J. Solid-State Circuits USA 40, 168-176 (2005).
39. 5 solid-electrolyte switch with improved reliability. VLSI Technol. Digest Tech. Pap. (in the press).
40. 1-xS nonvolatile memory devices. IEEE Electron Dev. Lett. 28, 14-16 (2007).
41. Kozicki, M. N., Gopalan, C., Balakrishnan, M. & Mitkova, M. A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte. IEEE Trans. Nanotechnol. 5, 535-544 (2006).
42. 2. IEEE Trans. Electron Dev. (in the press).
43. 1-xS ferroelectric Schottky diodes. Appl. Phys. Lett. 82, 4089-4091, (2003).
44. Kund, M. et al. Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20 nm. IEDM Tech. Digest, 754-757 (2005).
45. Dietrich, S. et al. A nonvolatile 2-Mbit CBRAM memory core featuring advanced read and program control. IEEE J. Solid-State Circuits 42, 839-845 (2007).
46. Xie, F. Q., Nittler, L., Obermair, C. & Schimmel, T. Gate-controlled atomic quantum switch. Phys. Rev. Lett. 93, 128303 (2004).
47. Banno, N., Sakamoto, T., Hasegawa, T., Terabe, K. & Aono, M. Effect of ion diffusion on switching voltage of solid-electrolyte nanometer switch. Jpn. J. Appl. Phys. 45, 3666-3668 (2006).
48. Wuttig, M. & Yamada, N. Phase change materials for rewriteable data storage. Nature Mater. 6, 824-832 (2007).
49. Baiatu, T., Waser, R. & Hardtl, K. H. DC electrical degradation of perovskite-type titanates. III. A model of the mechanism, J. Am. Ceram. Soc. 73, 1663-1673 (1990).
50. 3 single crystals. Appl Phys. Lett. 78, 3738-3740 (2001).
51. Pinto, R. Filamentary switching and memory action in thin anodic oxides. Phys. Lett. A 35, 155-156 (1971).
52. 2 thin-film switches using the scanning electron microscope. Solid-State Electron. 3, 428-429 (1973).
53. Oglmoto, Y, Tamia, Y., Kawasaki, M. & Tokura, Y. Resistance switching memory device with a nanoscale confined current path. Appl. Phys. Lett. 90, 143515 (2007).
54. Rossel, C., Meijer, G. I., Bremaud, D. & Widmer, D. Electrical current distribution across a, metal-insulator-metal structure during bistable switching. J. Appl. Phys. 90, 2892-2898 (2001).
55. 3. Nature Mater. 5, 312-320 (2006).
56. Szot, K., Dittmann, R., Speier, W. Sr Waser, R. Nanoscale resistive switching. Phys. Status Solidi 1, R86-R88 (2007).
57. Chen, X., Wu, N., Strozier, J. & Ignatiev, A. Spatially extended nature of resistive switching in perovskite oxide thin films. Appl. Phys. Lett. 89, 063507 (2006).
58. 3 for resistance-change memory. Adv. Mater. 19, 2232-2235 (2007).
59. Pender, L. F. & Fleming, R. J. Memory switching in glow discharge polymerized thin films. J. Appl. Phys. 46, 3426-3431 (1975).
60. Potember, R S., Poehler, T. O. & Cowan, D. O. Electrical switching and memory phenomena in Cu-TCNQ thin films. Appl. Phys. Lett. 34, 405-407 (1979).
61. Bandyopadhyay, A. & Pal, A. J. Large conductance switching and memory effects in organic molecules for data-storage applications. Appl. Phys. Lett. 82, 1215-1217 (2003).
62. Scott, J. C. & Bozano, L. D. Nonvolatile memory elements based on organic materials. Adv. Mater. 19, 1452-1463 (2007).
63. Karthauser, S. et al. Resistive switching of rose bengal devices: a molecular effect? J. Appl. Phys. 100, 094504 (2006).
64. Colle, M., Buchel, M. & de-Leeuw, D. M. Switching and filamentary conduction in non-volatile organic memories. Org. Electron. 7, 305-312 (2006).
65. Kever, T., Boettger, U., Schindler, Ch. & Waser, R. On the origin of bistable resistive switching in Cu:TCNQ. Appl. Phys. Lett. 91, 083506 (2007).
66. Feringa, B. L. Molecular Switches (Wiley-VCH, Weinheim, 2001).
67. Collier, C. P. et al. A [2]catenane-based solid state electronically reconfigurable switch. Science 289, 1172-1175 (2000).
68. Stewart, D. R et al. Molecule-Independent electrical switching in Pt/organic monolayer/Ti devices. Nano Lett. A, 133-136 (2004).
69. 2 by Ti. J. Phys. Chem. C111, 16-20 (2007).
70. Li, Z. et al. Two-dimensional, assembly and local, redox-activity of molecular hybrid structures in an electrochemical, environment. Faraday Disc. 131, 121-143 (2005).
71. Li, Z., Pobelov, I., Han, B., Wandlowski, T, Blaszczyk, A. Sr Mayor, M. Conductance of redox-active single molecular junctions: an electrochemical approach. Nanotechnology 18, 1-8 (2007).
72. Lortscher, E., Ciszek, J. W., Tour, J. & Riel, H. Reversible and controllable switching of a singlemolecule junction. Small 2, 973-977 (2006).
73. Wu, W et al. One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography. Appl. Phys. A 80, 1173-1178 (2005).
74. 11 bits per square centimetre. Nature 445, 14-17 (2007).
75. Lee, M. J. et al. A low-temperature grown oxide diode as a new switch element for high-density, nonvolatile memories. Adv. Mater. 19, 73-76 (2007).
76. Mustafa, J. Sr Waser, R. A novel reference scheme for reading passive resistive crossbar memories. JESS Trans. Nanotechnol 5, 687-691 (2006).
77. Heath, J. R, Kuekes, P. J., Snider, G. S. Sr Williams, R S. A defect-tolerant computer architecture: opportunities for nanotechnology. Science 280, 1716-1721, (1998).
78. Snider, G., Kuekes, P., Hogg, T. & Williams, R. S. Nanoelectronic architectures. Appl. Phys. A 80, 1183-1195 (2005).
79. DeHon, A., Randy Huang, & Wawrzynek, J. Stodiastic spatial routing for reconfigurable networks. Microprocessors Microsyst. 30, 301-318 (2006).
80. Likharev, K. K. Sr Strukov, D. B. in Introducing Molecular Electronics. Lecture Notes in Physics Vol. 680 (eds Cuniberti, G., Richter, K. Sr Fagas, G.) 447-477 (Springer, Berlin, 2006).
81. Lu, W. & Lieber, C. M. Nanoelectronics from the bottom up. Nature Mater. 6, 841-850 (2006).
82. Ignatiev, A. et al. Resistance switching in perovskite thin films. Phys. Stat: Sol. B 243, 2089-2097 (2006).
83. Honigschmid, H. et al. A non-volatile 2Mbit CBRAM memory core featuring advanced read and program control. VLSI Circuits Symp. Tech. Digest, 110-11(2006).
84. Zhimov, V V., Cavin-R-K-III, Hutchby, J. A. & Bourianoff, G. I. Limits to binary logic switch scaling - a gedenken model. Proc. IEEE USA 91, 1, 934-1939 (2003).
85. Cavin, R K., Zhlrnov, V. V., Herr, D. J. C., Alba Avila, & Hutchby, J. Research directions and diallenges in nanoelectronics. J.Nanoparticl Res. 8, 841-858 (2006).
86. Snider, G. S. & Williams, R. S. Nano/CMOS architectures using a field-programmable nanowire interconnect. Nanotechnology 18, 1-11 (2007).