Controllable capacitance-voltage hysteresis width in the aluminum-cerium-dioxide-silicon metal-insulator-semiconductor structure: Application to nonvolatile memory devices without ferroelectrics

Applied Physics Letters

Volumn 76, Issue 14, 2000, Pages 1881-1883

  Kim, L ^a   Kim, J ^a   Jung, D ^a   Roh, Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000667363     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126199     Document Type: Article

References (7)

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