The impact of in-situ rapid thermal gate dielectric processes on deep submicron mosfets

Solid-State Electronics

Volumn 41, Issue 4, 1997, Pages 619-625

  Zhang, Kevin X ^a,c   Osburn, Carlton M ^b  

^a Duke University   (United States)

^b North Carolina State University   (United States)

^c HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICA; SURFACE ROUGHNESS;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD); RAPID THERMAL OXIDES (RTO); REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD);

MOSFET DEVICES;

EID: 0031124745     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00195-5     Document Type: Article

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