Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices

Surface and Coatings Technology

Volumn 203, Issue 5-7, 2008, Pages 628-631

  Lin, Chih Yang ^a   Lee, Dai Ying ^a   Wang, Sheng Yi ^a   Lin, Chun Chieh ^a   Tseng, Tseung Yuen ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Al2O3; Nonvolatile memory; Resistive switching; RRAM

Indexed keywords

ALUMINUM; AMORPHOUS FILMS; DATA STORAGE EQUIPMENT; HEAT TREATMENT; MASS SPECTROMETRY; OXYGEN; OXYGEN VACANCIES; PLATINUM; SECONDARY ION MASS SPECTROMETRY; SWITCHING; SWITCHING SYSTEMS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

AL2O3; AMBIENT CONDITIONS; ANNEALING TEMPERATURES; CONDUCTING PATHS; HIGH DENSITIES; HIGH RESOLUTIONS; HIGH TO LOWS; INTER DIFFUSIONS; LOW TO HIGHS; NONVOLATILE MEMORY; PHASE BASED; RESISTIVE SWITCHING; RRAM; SECONDARY ION MASS SPECTROSCOPIES; THERMAL ANNEALING; THERMAL TREATMENTS; TRANSMISSION ELECTRON MICROSCOPES; TURN OFFS; X-RAY DIFFRACTIONS;

ANNEALING;

EID: 55749088041     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2008.06.133     Document Type: Article

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