Novel Plasma Enhanced Atomic Layer Deposition Technology for High-k Capacitor with EOT of 8 Å on Conventional Metal Electrode

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 23-24

  Won, Seok Jun ^c   Jeong, Yong Kuk ^c   Kwon, Dae Jin ^c   Park, Moon Han ^c   Kang, Ho Kyu ^c   Suh, Kwang Pyuk ^c   Kim, Hong Ki ^a   Ka, Jae Hwan ^a   Yun, Kwan Young ^a   Lee, Duck Hyung ^a   Kim, Dae Youn ^b   Yoo, Yong Min ^b   Lee, Choon Soo ^b  

^a Advanced Process Development Project   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DEPOSITION; ELECTRODES; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICES; HIGH-K DIELECTRIC; PROGRAMMABLE LOGIC CONTROLLERS; SYSTEM-ON-CHIP;

ATOMIC LAYER DEPOSITION (ALD);

DIELECTRIC FILMS; ATOMIC LAYER DEPOSITION;

CONVENTIONAL METALS; DEPOSITION TECHNIQUE; DEPOSITION TECHNOLOGY; EQUIVALENT OXIDE THICKNESS; FILM QUALITY; HIGH- K; METAL ELECTRODES; ON-CHIP CAPACITORS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SYSTEMS-ON-CHIP;

EID: 0141538365     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. S. Arai et al., IEDM Tech. Dig., pp403-406, 2001
2. J.H. Lee, etal., VLSI Tech. Dig., pp114-115, 2002