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Applied Physics Letters

Volumn 95, Issue 12, 2009, Pages

Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)

(8) Lamagna, L a Wiemer, C a Baldovino, S a Molle, A a Perego, M a Schamm Chardon, S b Coulon, P E b Fanciulli, M a,c

a LABORATORIO MDM (Italy)

b UNIVERSITÉ DE TOULOUSE (France)

c UNIVERSITY OF MILANO BICOCCA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL DEPTH PROFILING; DIELECTRIC CONSTANTS; ELECTRICAL PASSIVATION; GE INTERDIFFUSION; GE SURFACES; GE(100); INTERFACIAL REGION; THERMALLY INDUCED;

DEPTH PROFILING; PASSIVATION; PERMITTIVITY; ZIRCONIUM ALLOYS;

GERMANIUM;

EID: 70349659671 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3227669 Document Type: Article

Times cited : (35)

References (28)

1
- 33646875269
- Gate stack technology for nanoscale devices
- DOI 10.1016/S1369-7021(06)71541-3, PII S1369702106715413
- B. H. Lee, J. Oh, H. H. Tseng, R. Jammy, and H. Huff, Mater. Today 1369-7021 9, 32 (2006). 10.1016/S1369-7021(06)71541-3 (Pubitemid 43783459)
- (2006) Materials Today , vol.9 , Issue.6 , pp. 32-40
- Lee, B.H.¹ Oh, J.² Tseng, H.H.³ Jammy, R.⁴ Huff, H.⁵

2
- 37249061772
- High-k/Ge MOSFETs for future nanoelectronics
- DOI 10.1016/S1369-7021(07)70350-4, PII S1369702107703504
- Y. Kamata, Mater. Today 1369-7021 11, 30 (2008). 10.1016/S1369-7021(07) 70350-4 (Pubitemid 350266412)
- (2008) Materials Today , vol.11 , Issue.1-2 , pp. 30-38
- Kamata, Y.¹

3
- 33746795845
- 2 gate dielectrics
- DOI 10.1143/JJAP.45.5651
- Y. Kamata, Y. Kamimuta, T. Ino, R. Iijima, M. Koyama, and A. Nishiyama, Jpn. J. Appl. Phys., Part 1 0021-4922 45, 5651 (2006). 10.1143/JJAP.45.5651 (Pubitemid 44181776)
- (2006) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.45 , Issue.7 , pp. 5651-5656
- Kamata, Y.¹ Kamimuta, Y.² Ino, T.³ Iijima, R.⁴ Koyama, M.⁵ Nishiyama, A.⁶

4
- 21244468273
- 2 on Ge substrate in terms of the realization of ultrathin high-κ gate stacks
- DOI 10.1143/JJAP.44.2323, Solid State Devices and Materials
- Y. Kamata, Y. Kamimuta, T. Ino, and A. Nishiyama, Jpn. J. Appl. Phys., Part 1 0021-4922 44, 2323 (2005). 10.1143/JJAP.44.2323 (Pubitemid 40892674)
- (2005) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.44 , Issue.4 B , pp. 2323-2329
- Kamata, Y.¹ Kamimuta, Y.² Ino, T.³ Nishiyama, A.⁴

5
- 34249050458
- Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with Zr O2 high- k gate dielectrics on Ge epitaxial layers
- DOI 10.1063/1.2740108
- J. Oh, P. Majhi, C. Y. Kang, J. -W. Yang, H. -H. Tseng, and R. Jammy, Appl. Phys. Lett. 0003-6951 90, 202102 (2007). 10.1063/1.2740108 (Pubitemid 46795424)
- (2007) Applied Physics Letters , vol.90 , Issue.20 , pp. 202102
- Oh, J.¹ Majhi, P.² Kang, C.Y.³ Yang, J.-W.⁴ Tseng, H.-H.⁵ Jammy, R.⁶

6
- 34548230096
- Effective electrical passivation of Ge(100) for high- k gate dielectric layers using germanium oxide
- DOI 10.1063/1.2773759
- A. Delabie, F. Bellenger, M. Houssa, T. Conard, S. Van Elshocht, M. Caymax, M. Heyns, and M. Meuris, Appl. Phys. Lett. 0003-6951 91, 082904 (2007). 10.1063/1.2773759 (Pubitemid 47318977)
- (2007) Applied Physics Letters , vol.91 , Issue.8 , pp. 082904
- Delabie, A.¹ Bellenger, F.² Houssa, M.³ Conard, T.⁴ Van Elshocht, S.⁵ Caymax, M.⁶ Heyns, M.⁷ Meuris, M.⁸

7
- 0142057279
- 0003-6951,. 10.1063/1.1613031
- H. Kim, C. O. Chui, K. C. Saraswat, and P. C. McIntyre, Appl. Phys. Lett. 0003-6951 83, 2647 (2003). 10.1063/1.1613031
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2647
- Kim, H.¹ Chui, C.O.² Saraswat, K.C.³ McIntyre, P.C.⁴

8
- 51349107303
- 0003-6951,. 10.1063/1.2977555
- P. Tsipas, S. N. Volkos, A. Sotiropoulos, S. F. Galata, G. Mavrou, D. Tsoutsou, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine, Appl. Phys. Lett. 0003-6951 93, 082904 (2008). 10.1063/1.2977555
- (2008) Appl. Phys. Lett. , vol.93 , pp. 082904
- Tsipas, P.¹ Volkos, S.N.² Sotiropoulos, A.³ Galata, S.F.⁴ Mavrou, G.⁵ Tsoutsou, D.⁶ Panayiotatos, Y.⁷ Dimoulas, A.⁸ Marchiori, C.⁹ Fompeyrine, J.¹⁰

9
- 45049085545
- 0169-4332,. 10.1016/j.apsusc.2008.02.134
- M. Caymax, M. Houssa, G. Pourtois, F. Bellenger, K. Martens, A. Delabie, and S. Van Elshocht, Appl. Surf. Sci. 0169-4332 254, 6094 (2008). 10.1016/j.apsusc.2008.02.134
- (2008) Appl. Surf. Sci. , vol.254 , pp. 6094
- Caymax, M.¹ Houssa, M.² Pourtois, G.³ Bellenger, F.⁴ Martens, K.⁵ Delabie, A.⁶ Van Elshocht, S.⁷

10
- 57849127979
- 0003-6951,. 10.1063/1.3050451
- S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 0003-6951 93, 242105 (2008). 10.1063/1.3050451
- (2008) Appl. Phys. Lett. , vol.93 , pp. 242105
- Baldovino, S.¹ Molle, A.² Fanciulli, M.³

11
- 33747862495
- In situ chemical and structural investigations of the oxidation of Ge(001) substrates by atomic oxygen
- DOI 10.1063/1.2337543
- A. Molle, Md. N. K. Bhuiyan, G. Tallarida, and M. Fanciulli, Appl. Phys. Lett. 0003-6951 89, 083504 (2006). 10.1063/1.2337543 (Pubitemid 44286188)
- (2006) Applied Physics Letters , vol.89 , Issue.8 , pp. 083504
- Molle, A.¹ Bhuiyan, M.N.K.² Tallarida, G.³ Fanciulli, M.⁴

12
- 56349094813
- 0003-6951,. 10.1063/1.3028025
- H. J. Na, J. C. Lee, D. Heh, P. Sivasubramani, P. D. Kirsch, J. W. Oh, P. Majhi, S. Rivillon, Y. J. Chabal, B. H. Lee, and R. Choi, Appl. Phys. Lett. 0003-6951 93, 192115 (2008). 10.1063/1.3028025
- (2008) Appl. Phys. Lett. , vol.93 , pp. 192115
- Na, H.J.¹ Lee, J.C.² Heh, D.³ Sivasubramani, P.⁴ Kirsch, P.D.⁵ Oh, J.W.⁶ Majhi, P.⁷ Rivillon, S.⁸ Chabal, Y.J.⁹ Lee, B.H.¹⁰ Choi, R.¹¹

13
- 38049010868
- 0003-6951,. 10.1063/1.2828696
- D. Fischer and A. Kersch, Appl. Phys. Lett. 0003-6951 92, 012908 (2008). 10.1063/1.2828696
- (2008) Appl. Phys. Lett. , vol.92 , pp. 012908
- Fischer, D.¹ Kersch, A.²

14
- 56049098674
- 0163-1829,. 10.1103/PhysRevB.78.012102
- C. K. Lee, E. Cho, H. S. Lee, C. S. Hwang, and S. Han, Phys. Rev. B 0163-1829 78, 012102 (2008). 10.1103/PhysRevB.78.012102
- (2008) Phys. Rev. B , vol.78 , pp. 012102
- Lee, C.K.¹ Cho, E.² Lee, H.S.³ Hwang, C.S.⁴ Han, S.⁵

15
- 38349161968
- 0021-8979,. 10.1063/1.2827499
- G. Mavrou, S. Galata, P. Tsipas, A. Sotiropoulos, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, J. W. Seo, and C. Dieker, J. Appl. Phys. 0021-8979 103, 014506 (2008). 10.1063/1.2827499
- (2008) J. Appl. Phys. , vol.103 , pp. 014506
- Mavrou, G.¹ Galata, S.² Tsipas, P.³ Sotiropoulos, A.⁴ Panayiotatos, Y.⁵ Dimoulas, A.⁶ Evangelou, E.K.⁷ Seo, J.W.⁸ Dieker, C.⁹

16
- 45749120746
- 0003-6951,. 10.1063/1.2944892
- M. Houssa, G. Pourtois, M. Caymax, M. Meuris, and M. M. Heyns, Appl. Phys. Lett. 0003-6951 92, 242101 (2008). 10.1063/1.2944892
- (2008) Appl. Phys. Lett. , vol.92 , pp. 242101
- Houssa, M.¹ Pourtois, G.² Caymax, M.³ Meuris, M.⁴ Heyns, M.M.⁵

17
- 41749107944
- 0741-3106,. 10.1109/LED.2008.918272
- D. Kuzum, T. Krishnamohan, A. J. Pethe, A. K. Okyay, Y. Oshima, Y. Sun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. 0741-3106 29, 328 (2008). 10.1109/LED.2008.918272
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 328
- Kuzum, D.¹ Krishnamohan, T.² Pethe, A.J.³ Okyay, A.K.⁴ Oshima, Y.⁵ Sun, Y.⁶ McVittie, J.P.⁷ Pianetta, P.A.⁸ McIntyre, P.C.⁹ Saraswat, K.C.¹⁰

18
- 24944444330
- 2 films grown by atomic layer deposition on Ge
- DOI 10.1063/1.2042631, 112904
- S. Spiga, C. Wiemer, G. Tallarida, G. Scarel, S. Ferrari, G. Seguini, and M. Fanciulli, Appl. Phys. Lett. 0003-6951 87, 112904 (2005). 10.1063/1.2042631 (Pubitemid 41330887)
- (2005) Applied Physics Letters , vol.87 , Issue.11 , pp. 1-3
- Spiga, S.¹ Wiemer, C.² Tallarida, G.³ Scarel, G.⁴ Ferrari, S.⁵ Seguini, G.⁶ Fanciulli, M.⁷

19
- 0019056629
- 0038-1101,. 10.1016/0038-1101(80)90064-7
- W. A. Hill and C. C. Coleman, Solid-State Electron. 0038-1101 23, 987 (1980). 10.1016/0038-1101(80)90064-7
- (1980) Solid-State Electron. , vol.23 , pp. 987
- Hill, W.A.¹ Coleman, C.C.²

20
- 56749155953
- 0013-4651,. 10.1149/1.3000594
- S. Schamm, P. E. Coulon, S. Miao, S. N. Volkos, L. H. Lu, L. Lamagna, C. Wiemer, D. Tsoutsou, G. Scarel, and M. Fanciulli, J. Electrochem. Soc. 0013-4651 156, H1 (2009). 10.1149/1.3000594
- (2009) J. Electrochem. Soc. , vol.156 , pp. 1
- Schamm, S.¹ Coulon, P.E.² Miao, S.³ Volkos, S.N.⁴ Lu, L.H.⁵ Lamagna, L.⁶ Wiemer, C.⁷ Tsoutsou, D.⁸ Scarel, G.⁹ Fanciulli, M.¹⁰

21
- 59849100598
- 0003-6951,. 10.1063/1.3075609
- D. Tsoutsou, L. Lamagna, S. N. Volkos, A. Molle, S. Baldovino, M. Fanciulli, S. Schamm, and P. E. Coulon, Appl. Phys. Lett. 0003-6951 94, 053504 (2009). 10.1063/1.3075609
- (2009) Appl. Phys. Lett. , vol.94 , pp. 053504
- Tsoutsou, D.¹ Lamagna, L.² Volkos, S.N.³ Molle, A.⁴ Baldovino, S.⁵ Fanciulli, M.⁶ Schamm, S.⁷ Coulon, P.E.⁸

22
- 57049158157
- 0003-6951,. 10.1063/1.3033546
- G. Mavrou, P. Tsipas, A. Sotiropoulos, S. F. Galata, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine, Appl. Phys. Lett. 0003-6951 93, 212904 (2008). 10.1063/1.3033546
- (2008) Appl. Phys. Lett. , vol.93 , pp. 212904
- Mavrou, G.¹ Tsipas, P.² Sotiropoulos, A.³ Galata, S.F.⁴ Panayiotatos, Y.⁵ Dimoulas, A.⁶ Marchiori, C.⁷ Fompeyrine, J.⁸

23
- 0037084710
- 0163-1829,. 10.1103/PhysRevB.65.075105
- X. Zhao and D. Vanderbilt, Phys. Rev. B 0163-1829 65, 075105 (2002). 10.1103/PhysRevB.65.075105
- (2002) Phys. Rev. B , vol.65 , pp. 075105
- Zhao, X.¹ Vanderbilt, D.²

24
- 26844460609
- 2 to 100 GPa
- DOI 10.1107/S0021889805018145
- O. Ohtaka, D. Andrault, P. Bouvier, E. Schultz, and M. Mezouar, J. Appl. Crystallogr. 0021-8898 38, 727 (2005). 10.1107/S0021889805018145 (Pubitemid 41445211)
- (2005) Journal of Applied Crystallography , vol.38 , Issue.5 , pp. 727-733
- Ohtaka, O.¹ Andrault, D.² Bouvier, P.³ Schultz, E.⁴ Mezouar, M.⁵

25
- 18144384439
- 0031-9007,. 10.1103/PhysRevLett.94.146401
- S. A. Shevlin, A. Curioni, and W. Andreoni, Phys. Rev. Lett. 0031-9007 94, 146401 (2005). 10.1103/PhysRevLett.94.146401
- (2005) Phys. Rev. Lett. , vol.94 , pp. 146401
- Shevlin, S.A.¹ Curioni, A.² Andreoni, W.³

26
- 34248666115
- 3/Ge structure
- DOI 10.1016/j.mee.2007.04.107, PII S0167931707004583, INFOS 2007
- J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, and H. Iwai, Microelectron. Eng. 0167-9317 84, 2336 (2007). 10.1016/j.mee.2007.04.107 (Pubitemid 46777013)
- (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 2336-2339
- Song, J.¹ Kakushima, K.² Ahmet, P.³ Tsutsui, K.⁴ Sugii, N.⁵ Hattori, T.⁶ Iwai, H.⁷

27
- 67349083890
- 0167-9317,. 10.1016/j.mee.2009.02.037
- D. Tsoutsou, G. Apostolopoulos, S. Galata, P. Tsipas, A. Sotiropoulos, G. Mavrou, Y. Panayiotatos, and A. Dimoulas, Microelectron. Eng. 0167-9317 86, 1626 (2009). 10.1016/j.mee.2009.02.037
- (2009) Microelectron. Eng. , vol.86 , pp. 1626
- Tsoutsou, D.¹ Apostolopoulos, G.² Galata, S.³ Tsipas, P.⁴ Sotiropoulos, A.⁵ Mavrou, G.⁶ Panayiotatos, Y.⁷ Dimoulas, A.⁸

28
- 55249098436
- 0021-8979,. 10.1063/1.2999352
- D. Fischer and A. Kersch, J. Appl. Phys. 0021-8979 104, 084104 (2008). 10.1063/1.2999352
- (2008) J. Appl. Phys. , vol.104 , pp. 084104
- Fischer, D.¹ Kersch, A.²

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