PolySi- SiO2 - ZrO2 - SiO2 -Si flash memory incorporating a sol-gel-derived ZrO2 charge trapping layer

Journal of the Electrochemical Society

Volumn 153, Issue 11, 2006, Pages

  Hsu, Tzu Hsiang ^a   You, Hsin Chiang ^a   Ko, Fu Hsiang ^a,b   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; THRESHOLD VOLTAGE SHIFT; X-RAY PHOTOEMISSION SPECTROSCOPY;

ELECTRIC CHARGE; PHOTOEMISSION; POLYSILICON; RAPID THERMAL ANNEALING; SOL-GELS; THRESHOLD VOLTAGE; X RAY SPECTROSCOPY;

FLASH MEMORY;

EID: 33749635450     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2337846     Document Type: Article

References (14)

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley & Sons, New York (1981).
2. R. Bez, E. Camerlenghi, A. Modelli, and A. Visconti, Proc. IEEE, 91, 489 (2003).
3. B. D. Salvo, C. Gerardi, R. V. Schaijk, S. A. Lombardo, D. Corso, C. Plantamura, T. Serafino, G. Ammendola, M. V. Duuren, P. Goarin, W. Y. Mei, K. V. D. Jeugd, H. Baron, M. Ǵly, P. Mur, and S. Deleonibus, IEEE Trans. Device Mater. Reliab., 4, 377 (2004).
4. Y.-N. Tan, W.-K. Chim, B. J. Cho, and W.-K. Choi, IEEE Trans. Electron Devices, 51, 1143 (2004).
5. T. Yamaguchi, H. Satake, and N. Fukushima, IEEE Trans. Electron Devices, 51, 774 (2004).
6. W. Zhu, T. P. Ma, T. Tamagawa, Y. Di, J. Kim, R. Carruthers, M. Gibson, and T. Furukawa, Tech. Dig. - Int. Electron Devices Meet., 2001, 463.
7. Y. Kim, G. Gebara, M. Freiler, J. Barneet, D. Riely, J. Chen, K. Torres, J. Lim, B. Foran, F. Shappur, A. Agarwal, P. Lysaght, G. A. Brown, C. Young, S. Borthakur, H.-J. Li, B. Nguyen, P. Zeitzoff, G. Bersuker, D. Derro, R. Bergmann, R. W. Murto, A. Hou, H. R. Huff, E. Shero, C. Pomarede, M. Givens, M. Mazanec, and C. Werkhoven, Tech. Dig. - Int. Electron Devices Meet., 2001, 455.
8. J. C. Wang, S. H. Chiao, C. L. Lee, and T. F. Lei, J. Appl. Phys., 92, 3936 (2002).
9. J. P. Chang, Y. S. Lin, and K. Chu, J. Vac. Sci. Technol. B, 19, 1782 (2001).
10. J. P. Chang and Y. S. Lin, J. Appl. Phys., 90, 2964 (2001).
11. H. C. You, F. H. Ko, and T. F. Lei, J. Electrochem. Soc., 153, F94 (2006).
12. W. J. Tsai, N. K. Zous, C. J. Liu, C. H. Chen, T. Wang, S. Pan, and C.-Y. Lu, Tech. Dig. - Int. Electron Devices Meet., 2001, 719.
13. Y.-H. Shih, H.-T. Lue, K.-Y. Hsieh, R. Liu, and C.-Y. Lu, Tech. Dig. - Int. Electron Devices Meet., 2004, 881.
14. C. T. Swift, G. L. Chindalore, K. Harber, T. S. Harp, A. Hoefler, C. M. Hong, P. A. Ingersoll, C. B. Li, E. J. Prinz, and J. A. Yater, Tech. Dig. - Int. Electron Devices Meet., 2002, 927.