Dielectric characteristics of Al2O3-HfO2 nanolaminates on Si(100)

Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 1071-1073

  Cho, M H ^a   Roh, Y S ^a   Whang, C N ^a   Jeong, K ^a   Choi, H J ^a   Nam, S W ^a   Ko, D H ^a   Lee, J H ^b   Lee, N I ^b   Fujihara, K ^b  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHEMICAL STATE; DIELECTRIC CHARACTERISTICS; INTERFACIAL LAYER; LAMINATE STRUCTURES; NANO-LAMINATES; NANOLAMINATE STRUCTURES; POST ANNEALING TREATMENT; POST-ANNEALING TEMPERATURE; SI(1 0 0); STRUCTURAL CHARACTERISTICS; STRUCTURAL STABILITIES;

HAFNIUM OXIDES; STABILITY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM;

EID: 79956019609     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499223     Document Type: Article

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