Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanisms

Journal of Applied Physics

Volumn 93, Issue 8, 2003, Pages 4788-4793

  Chim, W K ^a   Ng, T H ^a   Koh, B H ^a   Choi, W K ^a   Zheng, J X ^a   Tung, C H ^b   Du, A Y ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC PROPERTIES; ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACIAL LAYERS;

ZIRCONIA;

EID: 0038341874     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1561995     Document Type: Article

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