SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 111, Issue 1, 2012, Pages

Robust unipolar resistive switching of Co nano-dots embedded ZrO 2 thin film memories and their switching mechanism

(3) Wu, Ming Chi a Wu, Tsung Han a Tseng, Tseung Yuen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE X RAY ANALYZER; HIGH POTENTIAL; MEMORY DEVICE; NANODOTS; NEGATIVE BIAS; NON-VOLATILE MEMORY APPLICATION; PHYSICAL MODEL; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MEMORIES; SET VOLTAGE; SWITCHING BEHAVIORS; SWITCHING MECHANISM; ULTRAHIGH DENSITY;

ELECTRIC PROPERTIES; PLATINUM; SWITCHING; SWITCHING SYSTEMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM ALLOYS;

COBALT;

EID: 84855920409 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3674322 Document Type: Article

Times cited : (37)

References (15)

1
- 77950302322
- 10.1063/1.3364130
- H. W. Zhang, B. Gao, B. Sun, G. P. Chen, L. Zeng, L. F. Liu, X. Y. Liu, J. Lu, R. Q. Han, J. F. Kang, and B. Yu, Appl. Phys. Lett. 96, 123502 (2010). 10.1063/1.3364130
- (2010) Appl. Phys. Lett. , vol.96 , pp. 123502
- Zhang, H.W.¹ Gao, B.² Sun, B.³ Chen, G.P.⁴ Zeng, L.⁵ Liu, L.F.⁶ Liu, X.Y.⁷ Lu, J.⁸ Han, R.Q.⁹ Kang, J.F.¹⁰ Yu, B.¹¹

2
- 34547842595
- Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide
- DOI 10.1063/1.2760156
- W. H. Guan, S. B. Long, R. Jia, and M. Liu, Appl. Phys. Lett. 91, 062111 (2007). 10.1063/1.2760156 (Pubitemid 47247131)
- (2007) Applied Physics Letters , vol.91 , Issue.6 , pp. 062111
- Guan, W.¹ Long, S.² Jia, R.³ Liu, M.⁴

3
- 37549046069
- 10.1063/1.2802990
- C. Y. Lin, C. Y. Wu, C. Y. Wu, C. Hu, and T. Y. Tseng, J. Appl. Phys. 102, 094101 (2007). 10.1063/1.2802990
- (2007) J. Appl. Phys. , vol.102 , pp. 094101
- Lin, C.Y.¹ Wu, C.Y.² Wu, C.Y.³ Hu, C.⁴ Tseng, T.Y.⁵

4
- 70349503989
- 10.1063/1.3231872
- S. Y. Wang, D. Y. Lee, T. Y. Tseng, and C. Y. Lin, Appl. Phys. Lett. 95, 112904 (2009). 10.1063/1.3231872
- (2009) Appl. Phys. Lett. , vol.95 , pp. 112904
- Wang, S.Y.¹ Lee, D.Y.² Tseng, T.Y.³ Lin, C.Y.⁴

5
- 79960927820
- 10.1109/LED.2011.2157454
- M. C. Wu, Y. W. Lin, W. Y. Jang, C. H. Lin, and T. Y. Tseng, IEEE Electron Device Lett. 32, 1026 (2011). 10.1109/LED.2011.2157454
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 1026
- Wu, M.C.¹ Lin, Y.W.² Jang, W.Y.³ Lin, C.H.⁴ Tseng, T.Y.⁵

6
- 69049093929
- 10.1063/1.3204450
- J. H. Choi, S. N. Das, and J. M. Myoung, Appl. Phys. Lett. 95, 062105 (2009). 10.1063/1.3204450
- (2009) Appl. Phys. Lett. , vol.95 , pp. 062105
- Choi, J.H.¹ Das, S.N.² Myoung, J.M.³

7
- 34547513244
- 3 memory thin films
- DOI 10.1149/1.2750450
- C. Y. Lin, C. Y. Wu, C. Y. Wu, C. Hu, and T. Y. Tseng, J. Electrochem. Soc. 154, G189 (2007). 10.1149/1.2750450 (Pubitemid 47186550)
- (2007) Journal of the Electrochemical Society , vol.154 , Issue.9
- Lin, C.-Y.¹ Wu, C.-Y.² Wu, C.-Y.³ Hu, C.⁴ Tseng, T.-Y.⁵

8
- 78650157236
- 10.1088/0957-4484/21/49/495201
- S. Y. Wang, D. Y. Lee, T. Y. Huang, J. W. Wu, and T. Y. Tseng, Nanotechnology 21, 495201 (2010). 10.1088/0957-4484/21/49/495201
- (2010) Nanotechnology , vol.21 , pp. 495201
- Wang, S.Y.¹ Lee, D.Y.² Huang, T.Y.³ Wu, J.W.⁴ Tseng, T.Y.⁵

9
- 77954194246
- 10.1063/1.3437635
- M. H. Lin, M. C. Wu, C. H. Lin, and T. Y. Tseng, J. Appl. Phys. 107, 124117 (2010). 10.1063/1.3437635
- (2010) J. Appl. Phys. , vol.107 , pp. 124117
- Lin, M.H.¹ Wu, M.C.² Lin, C.H.³ Tseng, T.Y.⁴

10
- 77955175743
- 10.1109/TED.2010.2050837
- M. H. Lin, M. C. Wu, C. H. Lin, and T. Y. Tseng, IEEE Trans. Electron Devices, 57, 1801 (2010). 10.1109/TED.2010.2050837
- (2010) IEEE Trans. Electron Devices , vol.57 , pp. 1801
- Lin, M.H.¹ Wu, M.C.² Lin, C.H.³ Tseng, T.Y.⁴

11
- 0027188860
- B. J. Keene, Int. Mater. Rev. 38, 157 (1993).
- (1993) Int. Mater. Rev. , vol.38 , pp. 157
- Keene, B.J.¹

12
- 33847577894
- 10.1021/j100888a024
- R. C. Garvie, J. Phys. Chem. 69, 1238 (1965). 10.1021/j100888a024
- (1965) J. Phys. Chem. , vol.69 , pp. 1238
- Garvie, R.C.¹

13
- 0003998388
- 84th ed. (CRC Press, Boca Raton, FL)
- D. R. Lide, CRC Handbook of Chemistry and Physics, 84th ed. (CRC Press, Boca Raton, FL, 2003), pp. 5-13-5-23.
- (2003) CRC Handbook of Chemistry and Physics , pp. 513-523
- Lide, D.R.¹

14
- 78951482667
- 10.1149/1.3531843
- Y. T. Tsai, T. C. Chang, C. C. Lin, S. C. Chen, C. W. Chen, M. Sze, F. S. Yeh (Hung), and T. Y. Tseng, Electrochem. Solid-State Lett. 14, H135 (2011). 10.1149/1.3531843
- (2011) Electrochem. Solid-State Lett. , vol.14 , pp. 135
- Tsai, Y.T.¹ Chang, T.C.² Lin, C.C.³ Chen, S.C.⁴ Chen, C.W.⁵ Sze, M.⁶ Yeh, F.S.⁷ Tseng, T.Y.⁸

15
- 78649444385
- 10.1109/LED.2010.2078794
- S. M. Yu and H.-S. Wong, IEEE Electron Device Lett. 31, 1455 (2010). 10.1109/LED.2010.2078794
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1455
- Yu, S.M.¹ Wong, H.-S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.