Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics

Applied Physics Letters

Volumn 79, Issue 20, 2001, Pages 3311-3313

  Ramanathan, Shriram ^a   Muller, David A ^b   Wilk, Glen D ^c   Park, Chang Man ^a   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035851464     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1418266     Document Type: Article

References (15)

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