Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications

Chemical Vapor Deposition

Volumn 12, Issue 2-3, 2006, Pages 165-171

  Zhu, Chunxiang ^a   Cho, Byung Jin ^a   Li, Ming Fu ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

ALD; HfO2 Al2O3 laminate; High k; MIM capacitor

Indexed keywords

ALUMINA; CAPACITANCE; CAPACITORS; DEPOSITION; DIELECTRIC FILMS; INTEGRATED CIRCUITS; LAMINATES; LEAKAGE CURRENTS;

ALD; CAPACITANCE DENSITY; HFO2AL2O3 LAMINATE; HIGH K; MIM CAPACITOR;

MIM DEVICES;

EID: 33645576054     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200506393     Document Type: Article

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