The temperature dependence of the electron mobility degradation mechanisms in n -channel metal-oxide-semiconductor field effect transistors with Zr O2 and Sm2 O3 gate dielectrics

Applied Physics Letters

Volumn 91, Issue 17, 2007, Pages

  Ho, Hsiao Shuo ^a   Chang, Ingram Yin Ku ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; GATE DIELECTRICS; MOSFET DEVICES; PHONON SCATTERING; SAMARIUM COMPOUNDS; THERMAL EFFECTS; ZIRCONIA;

COULOMB SCATTERING; MOBILITY DEGRADATION MECHANISMS; OXIDE TRAPPED CHARGES;

ELECTRON MOBILITY;

EID: 35549004014     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2802729     Document Type: Article

References (22)

1. J. Y. M. Lee and B. C. M. Lai, Ferroelectric and Dielectric Thin Films, edited by, H. S. Nalwa, (Academic, New York, 2002), Vol. 3, p. 1.
2. S. Y. Lee, H. Kim, P. C. Mclntyre, K. C. Saraswat, and J. S. Byun, Appl. Phys. Lett. 82, 2874 (2003).
3. R. Mahapatra, J. H. Lee, S. Maikap, G. S. Kar, A. Dhar, N. M. Hwang, D. Y. Kim, B. K. Mathur, and S. K. Ray, Appl. Phys. Lett. 82, 2320 (2003).
4. J. P. Chang and Y. S. Lin, Appl. Phys. Lett. 79, 3666 (2001).
5. V. A. Rozhkov, V. P. Goncharov, and A. Y. Trusova, Proceedings of the 1995 IEEE Conference on Conduction and Breakdown in Solid Dielectrics, 1995, p. 552.
6. V. A. Rozhkov, A. I. Petrov, V. P. Goncharov, and A. Y. Trusova, Proceeding of the 1995 IEEE Conference on Conduction and Breakdown in Solid Dielectrics, 1995 (unpublished), p. 418.
7. V. A. Rozhkov, A. Yu. Trusova, and I. G. Berezhnoy, Thin Solid Films 325, 151 (1998).
8. K. H. Kim, H. J. Won, and J. S. Choi, J. Phys. Chem. Solids 45, 1259 (1984).
9. A. A. Dakhel, J. Alloys Compd. 365, 233 (2004).
10. S. Saito, D. Hisamoto, S. Kimura, and M. Hiratani, Tech. Dig. - Int. Electron Devices Meet. 797 (2003).
11. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys. 90, 4587 (2001).
12. S. Saito, Kazuyoshi Torii, Y. Shimamoto, O. Tonomura, D. Hisamoto, T. Onai, M. Hiratani, and S. Kimura, J. Appl. Phys. 98, 113706 (2005).
13. W. J. Zhu and T. P. Ma, IEEE Electron Device Lett. 25, 89 (2004).
14. R. Chau, S. Datta, M. Doczy, B. Doyle, and J. Kavalieros, IEEE Electron Device Lett. 25, 408 (2004).
15. S. G. Sun and J. D. Plummer, IEEE Trans. Electron Devices 27, 1497 (1980).
16. C. G. Sodini, T. W. Ekstedt, and J. L. Moll, Solid-State Electron. 25, 833 (1982).
17. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University, New York, 1998), p. 132.
18. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 41, 2357 (1994).
19. K. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
20. S. M. Sze, Physics of Semiconductor Device, 2nd ed. (Wiley, New York, 1981), Vol., p. 451.
21. O. Weber, M. Casse, L. Thecenod, F. Ducroquet, T. Ernst, and S. Deleonibus, Solid-State Electron. 50, 626 (2006).
22. M. Casse, L. Thevenod, B. Guillaumot, L. Tosti, F. MMartin, J. Mitard, O. Weber, F. Andrieu, T. Ernst, G. Reimbold, T. Billon, M. Mouis, and F. Boulanger, IEEE Trans. Electron Devices 53, 759 (2006).