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Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

Highly uniform resistive switching characteristics of TiN/ZrO 2/Pt memory devices

(8) Sun, B a Liu, Y X a Liu, L F a Xu, N a Wang, Y a Liu, X Y a Han, R Q a Kang, J F a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION DISTRIBUTIONS; CONDUCTING PATHS; MEMORY DEVICES; OXYGEN IONS; OXYGEN RESERVOIRS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; RETENTION TIME; SWITCHING BEHAVIORS; SWITCHING CYCLES; SWITCHING PARAMETERS; TIN ELECTRODES; TRANSITION METAL-OXIDES;

DATA STORAGE EQUIPMENT; OXYGEN; PLATINUM; SWITCHING SYSTEMS; TIN; TIN OXIDES; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TRANSITION METALS;

SWITCHING;

EID: 63749096418 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3055414 Document Type: Article

Times cited : (98)

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