Resistance switching of Au-implanted- ZrO2 film for nonvolatile memory application

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Liu, Qi ^a,b   Guan, Weihua ^a   Long, Shibing ^a   Liu, Ming ^a   Zhang, Sen ^a   Wang, Qin ^a   Chen, Junning ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b ANHUI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD; HEAT CONDUCTION; HETEROJUNCTIONS; SWITCHING SYSTEMS;

CONDUCTION MECHANISMS; CURRENT CHARACTERISTICS; DATA LOSSES; DC SWITCHING; DC VOLTAGES; HIGH RESISTANCES; LOW RESISTANCES; NONVOLATILE-MEMORY APPLICATIONS; PULSE VOLTAGES; RANGE HOPPING; RESISTANCE RATIOS; RESISTANCE STATES; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SWITCHING BEHAVIORS; SWITCHING MECHANISMS; VOLTAGE PULSES;

SWITCHING;

EID: 58149262845     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3033561     Document Type: Article

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