Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si

Solid-State Electronics

Volumn 48, Issue 12, 2004, Pages 2235-2241

  Maiti, C K ^a   Dalapati, G K ^a   Chatterjee, S ^a   Samanta, S K ^a   Varma, S ^b   Patil, S ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b INSTITUTE OF PHYSICS   (India)

Author keywords

Conduction mechanism; Heterostructure MOSFET; High k gate dielectric; Plasma deposition; Strained Si; ZrO2

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRAIN; ULTRATHIN FILMS;

CONDUCTION MECHANISM; HETEROSTRUCTURE MOSFET; HIGH-K GATE DIELECTRICS;

GATES (TRANSISTOR);

EID: 4544320429     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.04.012     Document Type: Article

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