SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 157, Issue 7, 2010, Pages

Ti-induced recovery phenomenon of resistive switching in ZrO2 thin films

(3) Lee, Dai Ying a Wang, Sheng Yu a Tseng, Tseung Yuen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BREAK DOWN; COMMERCIAL APPLICATIONS; CONDUCTING FILAMENT; HIGH YIELD; INTERFACE ENGINEERING; INTERFACE LAYER; OXYGEN IONS; OXYGEN RESERVOIR; RECOVERY PHENOMENA; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SERIES RESISTANCES; TIO;

MOS DEVICES; OXYGEN; PLATINUM; RANDOM ACCESS STORAGE; RAPID SOLIDIFICATION; RECOVERY; REDOX REACTIONS; SWITCHING SYSTEMS;

ZIRCONIUM ALLOYS;

EID: 77953149236 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3428462 Document Type: Article

Times cited : (28)

References (24)

1
- 21644443347
- G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. -S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, Tech. Dig.-Int. Electron Devices Meet. , 2004, 587.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2004 , pp. 587
- Baek, G.¹ Lee, M.S.² Seo, S.³ Lee, M.J.⁴ Seo, D.H.⁵ Suh, D.-S.⁶ Park, J.C.⁷ Park, S.O.⁸ Kim, H.S.⁹ Yoo, I.K.¹⁰

2
- 50249152925
- M. J. Lee, Y. Park, B. S. Kang, S. E. Ahn, C. Lee, K. Kim, W. Xianyu, G. Stefanovich, J. H. Lee, S. J. Chung, Tech. Dig.-Int. Electron Devices Meet. , 2007, 771.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 771
- Lee, M.J.¹ Park, Y.² Kang, B.S.³ Ahn, S.E.⁴ Lee, C.⁵ Kim, K.⁶ Xianyu, W.⁷ Stefanovich, G.⁸ Lee, J.H.⁹ Chung, S.J.¹⁰

3
- 67649504624
- H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, Tech. Dig.-Int. Electron Devices Meet. , 2008, 297.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 297
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Chen, Y.S.⁴ Wang, C.C.⁵ Tzeng, P.J.⁶ Lin, C.H.⁷ Chen, F.⁸ Lien, C.H.⁹ Tsai, M.J.¹⁰

4
- 33748513895
- Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
- DOI 10.1063/1.2339032
- K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka, Appl. Phys. Lett. , 89, 103509 (2006). 10.1063/1.2339032 (Pubitemid 44359658)
- (2006) Applied Physics Letters , vol.89 , Issue.10 , pp. 103509
- Kinoshita, K.¹ Tamura, T.² Aoki, M.³ Sugiyama, Y.⁴ Tanaka, H.⁵

5
- 3242892591
- 10.1063/1.1768305
- S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, and A. J. Jacobson, Appl. Phys. Lett. , 85, 317 (2004). 10.1063/1.1768305
- (2004) Appl. Phys. Lett. , vol.85 , pp. 317
- Tsui, S.¹ Baikalov, A.² Cmaidalka, J.³ Sun, Y.Y.⁴ Wang, Y.Q.⁵ Xue, Y.Y.⁶ Chu, C.W.⁷ Chen, L.⁸ Jacobson, A.J.⁹

6
- 43349101629
- 10.1002/adma.200702024
- S. C. Chae, J. S. Lee, S. Kim, S. B. Lee, S. H. Chang, C. Liu, B. Kahng, H. Shin, D. -W. Kim, C. U. Jung, Adv. Mater. , 20, 1154 (2008). 10.1002/adma.200702024
- (2008) Adv. Mater. , vol.20 , pp. 1154
- Chae, S.C.¹ Lee, J.S.² Kim, S.³ Lee, S.B.⁴ Chang, S.H.⁵ Liu, C.⁶ Kahng, B.⁷ Shin, H.⁸ Kim, D.-W.⁹ Jung, C.U.¹⁰

7
- 50249141738
- U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, and M. Fanciulli, Tech. Dig.-Int. Electron Devices Meet. , 2007, 775.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 775
- Russo, U.¹ Ielmini, D.² Cagli, C.³ Lacaita, A.L.⁴ Spiga, S.⁵ Wiemer, C.⁶ Perego, M.⁷ Fanciulli, M.⁸

8
- 34548656097
- 3 for resistance-change memory
- DOI 10.1002/adma.200602915
- M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, and B. P. Andreasson, Adv. Mater. , 19, 2232 (2007). 10.1002/adma.200602915 (Pubitemid 47409283)
- (2007) Advanced Materials , vol.19 , Issue.17 , pp. 2232-2235
- Janousch, M.¹ Meijer, G.I.² Staub, U.³ Delley, B.⁴ Karg, S.E.⁵ Andreasson, B.P.⁶

9
- 68249119187
- 10.1063/1.3191674
- M. K. Yang, J. W. Park, T. K. Ko, and J. K. Lee, Appl. Phys. Lett. , 95, 042105 (2009). 10.1063/1.3191674
- (2009) Appl. Phys. Lett. , vol.95 , pp. 042105
- Yang, M.K.¹ Park, J.W.² Ko, T.K.³ Lee, J.K.⁴

10
- 10044237971
- 10.1063/1.1812580
- A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. , 85, 4073 (2004). 10.1063/1.1812580
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4073
- Sawa, A.¹ Fujii, T.² Kawasaki, M.³ Tokura, Y.⁴

11
- 34547306629
- 3/metal structures
- DOI 10.1002/adma.200601957
- K. Tsubouchi, I. Ohkubo, H. Kumigashira, M. Oshima, Y. Matsumoto, K. Itaka, T. Ohnishi, M. Lippmaa, and H. Koinuma, Adv. Mater. , 19, 1711 (2007). 10.1002/adma.200601957 (Pubitemid 47153955)
- (2007) Advanced Materials , vol.19 , Issue.13 , pp. 1711-1713
- Tsubouchi, K.¹ Ohkubo, I.² Kumigashira, H.³ Oshima, M.⁴ Matsumoto, Y.⁵ Itaka, K.⁶ Ohnishi, T.⁷ Lippmaa, M.⁸ Koinuma, H.⁹

12
- 34247561316
- 2 film memory devices
- DOI 10.1109/LED.2007.894652
- C. Y. Lin, C. Y. Wu, C. Y. Wu, T. Y. Lee, F. L. Yang, C. Hu, and T. Y. Tseng, IEEE Electron Device Lett. EDLEDZ 0741-3106, 28, 366 (2007). 10.1109/LED.2007.894652 (Pubitemid 46667430)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.5 , pp. 366-368
- Lin, C.-Y.¹ Wu, C.-Y.² Wu, C.-Y.³ Wu, T.-Y.⁴ Lee, T.-C.⁵ Yang, F.-L.⁶ Hu, C.⁷ Tseng, T.-Y.⁸

13
- 37549046069
- 10.1063/1.2802990
- C. Y. Lin, C. Y. Wu, C. Y. Wu, T. Y. Tseng, and C. Hu, J. Appl. Phys. , 102, 094101 (2007). 10.1063/1.2802990
- (2007) J. Appl. Phys. , vol.102 , pp. 094101
- Lin, C.Y.¹ Wu, C.Y.² Wu, C.Y.³ Tseng, T.Y.⁴ Hu, C.⁵

14
- 49149114216
- 10.1149/1.2946430
- C. Y. Lin, S. Y. Wang, D. Y. Lee, and T. Y. Tseng, J. Electrochem. Soc. , 155, H615 (2008). 10.1149/1.2946430
- (2008) J. Electrochem. Soc. , vol.155
- Lin, C.Y.¹ Wang, S.Y.² Lee, D.Y.³ Tseng, T.Y.⁴

15
- 33747375633
- 10.1063/1.2222069
- Y. W. Xie, J. R. Sun, D. J. Wang, S. Liang, and B. G. Shen, J. Appl. Phys. , 100, 033704 (2006). 10.1063/1.2222069
- (2006) J. Appl. Phys. , vol.100 , pp. 033704
- Xie, Y.W.¹ Sun, J.R.² Wang, D.J.³ Liang, S.⁴ Shen, B.G.⁵

16
- 44849129646
- 10.1063/1.2938049
- T. Harada, I. Ohkubo, K. Tsubouchi, H. Kumigashira, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, and M. Oshima, Appl. Phys. Lett. , 92, 222113 (2008). 10.1063/1.2938049
- (2008) Appl. Phys. Lett. , vol.92 , pp. 222113
- Harada, T.¹ Ohkubo, I.² Tsubouchi, K.³ Kumigashira, H.⁴ Ohnishi, T.⁵ Lippmaa, M.⁶ Matsumoto, Y.⁷ Koinuma, H.⁸ Oshima, M.⁹

17
- 0001331485
- 10.1063/1.126902
- A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. , 77, 139 (2000). 10.1063/1.126902
- (2000) Appl. Phys. Lett. , vol.77 , pp. 139
- Beck, A.¹ Bednorz, J.G.² Gerber, Ch.³ Rossel, C.⁴ Widmer, D.⁵

18
- 36048964246
- Anode-interface localized filamentary mechanism in resistive switching of Ti O2 thin films
- DOI 10.1063/1.2749846
- K. M. Kim, B. J. Choi, Y. C. Shin, S. Choi, and C. S. Hwang, Appl. Phys. Lett. , 91, 012907 (2007). 10.1063/1.2749846 (Pubitemid 350092117)
- (2007) Applied Physics Letters , vol.91 , Issue.1 , pp. 012907
- Kim, K.M.¹ Choi, B.J.² Shin, Y.C.³ Choi, S.⁴ Hwang, C.S.⁵

19
- 37749007146
- PRBMDO 0163-1829,. 10.1103/PhysRevB.77.035105
- I. H. Inoue, S. Yasuda, H. Akinaga, and H. Takagi, Phys. Rev. B PRBMDO 0163-1829, 77, 035105 (2008). 10.1103/PhysRevB.77.035105
- (2008) Phys. Rev. B , vol.77 , pp. 035105
- Inoue, I.H.¹ Yasuda, S.² Akinaga, H.³ Takagi, H.⁴

20
- 29244487117
- High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs
- DOI 10.1109/LED.2005.859625
- D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M. J. Lee, S. A. Seo, and I. K. Yoo, IEEE Electron Device Lett. EDLEDZ 0741-3106, 26, 719 (2005). 10.1109/LED.2005.859625 (Pubitemid 41825089)
- (2005) IEEE Electron Device Letters , vol.26 , Issue.12 , pp. 900-902
- Lee, Y.¹ Bae, S.² Fonash, S.J.³

21
- 34247877733
- Reproducible unipolar resistance switching in stoichiometric Zr O2 films
- DOI 10.1063/1.2734900
- X. Wu, P. Zhou, J. Li, L. Y. Chen, H. B. Lv, Y. Y. Lin, and T. A. Tang, Appl. Phys. Lett. , 90, 183507 (2007). 10.1063/1.2734900 (Pubitemid 46701225)
- (2007) Applied Physics Letters , vol.90 , Issue.18 , pp. 183507
- Wu, X.¹ Zhou, P.² Li, J.³ Chen, L.Y.⁴ Lv, H.B.⁵ Lin, Y.Y.⁶ Tang, T.A.⁷

22
- 70349503989
- 10.1063/1.3231872
- S. Y. Wang, D. Y. Lee, T. Y. Tseng, and C. Y. Lin, Appl. Phys. Lett. , 95, 112904 (2009). 10.1063/1.3231872
- (2009) Appl. Phys. Lett. , vol.95 , pp. 112904
- Wang, S.Y.¹ Lee, D.Y.² Tseng, T.Y.³ Lin, C.Y.⁴

23
- 4944257396
- 10.1063/1.1776636
- H. Kim, P. C. McIntyre, C. O. Chui, K. C. Saraswat, and S. Stemmer, J. Appl. Phys. , 96, 3467 (2004). 10.1063/1.1776636
- (2004) J. Appl. Phys. , vol.96 , pp. 3467
- Kim, H.¹ McIntyre, P.C.² Chui, C.O.³ Saraswat, K.C.⁴ Stemmer, S.⁵

24
- 84975348619
- 10.1149/1.2430279
- W. W. Smeltzer, J. Electrochem. Soc. , 103, 209 (1956). 10.1149/1.2430279
- (1956) J. Electrochem. Soc. , vol.103 , pp. 209
- Smeltzer, W.W.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.