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Nanotechnology

Volumn 21, Issue 49, 2010, Pages

Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer

(5) Wang, Sheng Yu a Lee, Dai Ying a Huang, Tai Yuen a Wu, Jia Woei a Tseng, Tseung Yuen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; FORMING PROCESS; HIGH-SPEED OPERATION; INTERFACE LAYER; MEMORY DEVICE; MEMORY FILM; MEMORY PERFORMANCE; METAL LAYER; NONDESTRUCTIVE READOUT; OPERATION VOLTAGE; OPERATIONAL ERRORS; POST ANNEALING; RESISTIVE SWITCHING; RETENTION TIME; SWITCHING CHARACTERISTICS;

MOLYBDENUM; OXYGEN; SWITCHING SYSTEMS; ZIRCONIUM ALLOYS;

OXYGEN VACANCIES;

EID: 78650157236 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/21/49/495201 Document Type: Article

Times cited : (86)

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