Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1628-1632

  Wang, Sheng Yu ^a   Tsai, Chen Han ^a   Lee, Dai Ying ^a   Lin, Chih Yang ^b   Lin, Chun Chieh ^c   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Global Mixed Mode Technology Inc   (Taiwan)

^c NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

Nonvolatile memory; Resistive switching; RRAM; ZrO2

Indexed keywords

DATA RETENTION; DC VOLTAGE; FORMING PROCESS; GOOD STABILITY; HIGH POTENTIAL; MEMORY APPLICATIONS; MEMORY STATE; NON-VOLATILE MEMORIES; NONDESTRUCTIVE READOUT; OPERATION ERRORS; OPERATION VOLTAGE; PULSE CYCLE; PULSE WIDTH; RESISTIVE SWITCHING; RRAM; STRESS VOLTAGES; VOLTAGE PULSE; ZRO2;

ELECTRIC POTENTIAL; PLATINUM; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS; ZIRCONIUM ALLOYS;

EQUIPMENT;

EID: 79958030027     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.11.058     Document Type: Article

References (19)

1. I.G. Baek, M.S. Lee, S. Seo, M.J. Lee, D.H. Seo, D.S. Suh, J.C. Park, S.O. Park, H.S. Kim, I.K. Yoo, U.-In Chung, and J.T. Moon Int. Electron Devices Meet., Tech. Dig. 2004 587
2. T.N. Fang, S. Kaza, S. Haddad, A. Chen, Y.C. Wu, Z. Lan, S. Avanzino, D. Liao, C. Gopalan, S. Choi, S. Mahdavi, M. Buynoski, Y. Lin, C. Marrian, C. Bill, M. VanBuskirk, and M. Taguchi Int. Electron Devices Meet., Tech. Dig. 2006 789
3. K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka Appl. Phys. Lett. 89 2006 103509
4. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura Appl. Phys. Lett. 85 2004 4073
5. C.Y. Lin, C.Y. Wu, C.Y. Wu, T.C. Lee, F.L. Yang, C. Hu, and T.Y. Tseng IEEE Electron Device Lett. 28 2007 366
6. C.Y. Lin, C.Y. Wu, C.Y. Wu, T.Y. Tseng, and C. Hu J. Appl. Phys. 102 2007 094101
7. C.Y. Lin, S.Y. Wang, D.Y. Lee, and T.Y. Tseng J. Electrochem. Soc. 155 2008 H615
8. C.Y. Lin, C.Y. Wu, C.Y. Wu, C. Hu, and T.Y. Tseng J. Electrochem. Soc. 154 2007 G189
9. C.C. Lin, C.Y. Lin, M.H. Lin, C.H. Lin, and T.Y. Tseng IEEE Trans. Electron Devices 54 2007 3146
10. X. Wu, P. Zhou, J. Li, L.Y. Chen, H.B. Lv, Y.Y. Lin, and T.A. Tang Appl. Phys. Lett. 90 2007 183507
11. D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M. Lee, S. Seo, and I.K. Yoo IEEE Electron Device Lett. 26 2005 719
12. D. Lee, D. Seong, H.J. Choi, I. Jo, R. Dong, W. Xiang, S. Oh, M. Pyun, S. Seo, S. Heo, M. Jo, D. Hwang, H.K. Park, M. Chang, M. Hasan, and H. Hwang Int. Electron Devices Meet., Tech. Dig. 2006 346733
13. B. Sun, Y.X. Liu, L.F. Liu, N. Xu, Y. Wang, X.Y. Liu, R.Q. Han, and J.F. Kang J. Appl. Phys. 105 2009 061630
14. W. Guan, S. Long, R. Jia, and M. Liu Appl. Phys. Lett. 91 2007 062111
15. Q. Liu, W. Guan, S. Long, M. Liu, S. Zhang, Q. Wang, and J. Chen J. Appl. Phys. 104 2008 114514
16. W. Guan, S. Long, Q. Liu, M. Liu, and W. Wang IEEE Electron Device Lett. 29 2008 434
17. Q. Liu, W. Guan, S. Long, R. Jia, M. Liu, and J. Chen Appl. Phys. Lett. 92 2008 012117
18. D.C. Kim, S. Seo, S.E. Ahn, D.-S. Suh, M.J. Lee, B.-H. Park, I.K. Yoo, I.G. Baek, H.-J. Kim, E.K. Yim, J.E. Lee, S.O. Park, H.S. Kim, U.-In Chung, J.T. Moon, and B.I. Ryu Appl. Phys. Lett. 88 2006 202102
19. D.C. Kim, M.J. Lee, S.E. Ahn, S. Seo, J.C. Park, I.K. Yoo, I.G. Baek, H.J. Kim, E.K. Yim, J.E. Lee, S.O. Park, H.S. Kim, U.-In Chung, J.T. Moon, and B.I. Ryu Appl. Phys. Lett. 88 2006 232106