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Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO 2 films

(4) Soo Lee, Myung a Choi, Sungho a An, Chee Hong a Kim, Hyoungsub a

a Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM MICROSTRUCTURES; FORMING PROCESS; ION DOPING; MEMORY WINDOW; RESISTIVE MEMORIES; RESISTIVE SWITCHING; SWITCHING CHARACTERISTICS; VACANCY GENERATION; VALENCE NUMBER;

GADOLINIUM; OXYGEN VACANCIES; ZIRCONIUM ALLOYS;

DOPING (ADDITIVES);

EID: 84859791367 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3700728 Document Type: Article

Times cited : (54)

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