Increasing process margin in SiGe heterojunction bipolar technology by adding carbon

IEEE Transactions on Electron Devices

Volumn 46, Issue 9, 1999, Pages 1910-1912

  Osten, H J ^a   Knoll, D ^a   Heinemann, B ^a   Schley, P ^a  

^a IHP   (Germany)

Author keywords

Heterojunction bipolar transistor; High frequency devices; Si SiGe:C heterojunction

Indexed keywords

ADDITION REACTIONS; BORON; CARBON; ELECTRIC CURRENTS; OSCILLATIONS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

PROCESS MARGIN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032595351     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.784193     Document Type: Article

References (7)

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