Monte Carlo simulation of leakage currents in TiN/ZrO2 capacitors

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 327-334

  Jegert, Gunther ^a   Kersch, Alfred ^b   Weinreich, Wenke ^c   Lugli, Paolo ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b MUNICH UNIVERSITY OF APPLIED SCIENCES   (Germany)

^c Fraunhofer Center Nanoelectronic Technologies   (Germany)

Author keywords

DRAM; high ; leakage currents(Monte Carlo (MC) methods; thin film capacitors; TiN; ZrO2

Indexed keywords

BULK TRAPS; CONDUCTION BAND OFFSET; DRAM; ELECTRONIC TRANSPORT; EXPERIMENTAL DATA; HIGH VOLTAGE; KINETIC MONTE CARLO; MEDIUM VOLTAGE; MONTE CARLO SIMULATION; POOLE-FRENKEL EMISSION; POSITIVELY CHARGED; SIMULATION RESULT; THIN-FILM CAPACITORS; TRANSPORT MECHANISM; TRANSPORT OF CHARGE; TRAP ASSISTED TUNNELING; TRAP DEPTH; ZRO2;

CAPACITORS; COMPUTER SIMULATION; DIELECTRIC FILMS; ELECTRON MOBILITY; HETEROJUNCTIONS; MONTE CARLO METHODS; THIN FILM CIRCUITS; TITANIUM NITRIDE; ZIRCONIUM ALLOYS;

LEAKAGE CURRENTS;

EID: 79151480349     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2090158     Document Type: Article

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