Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

  Wang, Sheng Yu ^a   Lee, Dai Ying ^a   Tseng, Tseung Yuen ^a   Lin, Chih Yang ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Global Mixed Mode Technology Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POLARITY; CONDUCTING FILAMENT; DEVICE RELIABILITY; DIELECTRIC STRENGTHS; ELECTRODE THICKNESS; INTERFACE LAYER; INTERFACE THICKNESS; MEMORY FILM; RESISTIVE SWITCHING BEHAVIORS; SIMPLE METHOD;

ELECTRIC FIELDS; SWITCHING SYSTEMS;

ZIRCONIUM ALLOYS;

EID: 70349503989     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3231872     Document Type: Article

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