Improved charge storage characteristics of the tetralayer non-volatile memory structure using nickel nanocrystal trapping layer

Semiconductor Science and Technology

Volumn 24, Issue 11, 2009, Pages

  Panda, Debashis ^a   Dhar, Achintya ^a   Ray, Samit K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CHARGE STORAGE; CHARGE STORAGE CHARACTERISTIC; CURRENT-VOLTAGE MEASUREMENTS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NANOCRYSTAL MEMORIES; NICKEL NANOCRYSTALS; NON-VOLATILE MEMORIES; RETENTION PROPERTIES; SI SUBSTRATES; THERMAL STABILITY; TRANSMISSION ELECTRON MICROGRAPH; TRAPPING LAYERS;

CAPACITANCE; CHARGE TRAPPING; HAFNIUM COMPOUNDS; MOS CAPACITORS; NANOCRYSTALS; NICKEL; NICKEL ALLOYS; SEMICONDUCTOR STORAGE; SILICON COMPOUNDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70450178039     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/11/115020     Document Type: Article

References (24)

1. Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbé E F and Chan K 1996 Appl. Phys. Lett. 68 1377
2. Kim I et al 1998 IEEE IEDM Tech. Dig. p 111
3. Hori T, Ohzone T, Odake Y and Hirase J 1992 IEEE IEDM Tech. Dig. p 496
4. Hanafi H I, Tiwari S and Khan I 1996 IEEE Trans. Electron Devices 43 1553
5. Blauwe J D 2002 IEEE Trans. Nanotechnology 1 72
6. Das K, NandaGoswami M, Mahapatra R, Kar G S, Dhar A, Acharya H N, Maikap S, Lee J-H and Ray S K 2004 Appl. Phys. Lett. 84 1386
7. Lee J J, Harada Y, Pyun J W and Kwong D-L 2005 Appl. Phys. Lett. 86 103505
8. King Y C, King T J and Hu C M 2001 IEEE Trans. Electron Devices 48 696
9. Yang F M, Chang T C, Liu P T, Chen U S, Yeh P H, Yu Y C, Lin J Y, Sze S M and Lou J C 2007 Appl. Phys. Lett. 90 222104
10. Park B, Cho K, Kim H and Kim S 2006 Semicond. Sci. Technol. 21 975
11. Panda D, Maikap S, Dhar A and Ray S K 2009 Electrochem.Solid-State Lett. 12 H7
12. Jang Y-S, Yoon J-H and Elliman R G 2008 Appl. Phys. Lett. 92 253108
13. Samanta S K, Yoo W J, Samudra G, Tok E S, Bera L K and Balasubramanian N 2005 Appl. Phys. Lett. 87 113110
14. Seol K S et al 2006 Appl. Phys. Lett. 89 083109
15. Maikap S, Tzeng P J, Lee H Y, Wang C C, Tien T C, Lee L S and Tsai M J 2007 Appl. Phys. Lett. 91 043114
16. Sim J H, Wen H C, Lu J P and Kwong D L 2003 IEEE Electron Device Lett. 24 631
17. Panda D, Dhar A and Ray S K 2008 IEEE Trans. Electron Devices 55 2403
18. Moromoto T et al 1991 IEDM Tech. Dig. p 653
19. Baik S J, Choi S, Chung U-I and Moon J T 2003 IEEE IEDM Tech. Dig. p 545
20. Compagnoni C M, Ielmini D, Spinelli A S and Lacaita A L 2005 IEEE Trans. Electron Devices 52 2473
21. Lai C S, Fan K M, Peng H K, Lin S J, Lee C Y and Ai C F 2007 Appl. Phys. Lett. 90 172904
22. Wang et al 2006 J. Cryst. Growth 294 486
23. Hill W A and Coleman C C 1980 Solid-State Electron. 23 987
24. Ng T H, Chim W K and Choi W K 2006 Appl. Phys. Lett. 88 113112