Ultrathin silicon nitride films fabricated by single-wafer processing using an SiH2Cl2-NH3-H2 system and in situ H2 cleaning

Journal of the Electrochemical Society

Volumn 143, Issue 4, 1996, Pages 1459-1464

  Kobayashi, Kiyoteru ^a   Inaba, Yutaka ^a   Ogata, Tamotsu ^a   Katayama, Toshiharu ^a   Watanabe, Hajime ^a   Matsui, Yasuji ^a   Hirayama, Makoto ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL CLEANING; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; FILM PREPARATION; HYDROGEN; OXIDATION; PLASMA APPLICATIONS; SILICON NITRIDE; SILICON WAFERS;

CONDUCTION CURRENT; IN SITU HYDROGEN CLEANING; SINGLE WAFER PROCESSING; THREE DIMENSIONAL CYLINDRICAL STACKED CAPACITOR CELLS; ULTRATHIN SILICON NITRIDE FILMS;

ULTRATHIN FILMS;

EID: 0030128343     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836659     Document Type: Article

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