Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 510-513

  Kim, Dong Won ^a   Prins, Freek E ^a   Kim, Taehoon ^b   Hwang, Sungbo ^a   Lee, C H ^a   Kwong, Dim Lee ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

Floating gate memory; High K tunneling oxide; Nanocrystal; Quantum dot; SiGe; ZrO2

Indexed keywords

CHARGE TRANSFER; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SILICON COMPOUNDS; ZIRCONIUM COMPOUNDS;

GATE MEMORY DEVICES;

DATA STORAGE EQUIPMENT;

EID: 0038056320     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.804722     Document Type: Article

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