New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60 nm and below DRAMs

Solid-State Electronics

Volumn 51, Issue 11-12, 2007, Pages 1529-1533

  Cho, Ho Jin ^a   Kim, Young Dae ^a   Park, Dong Su ^a   Lee, Euna ^a   Park, Cheol Hwan ^a   Jang, Jun Soo ^a   Lee, Keum Bum ^a   Kim, Hai Won ^a   Ki, Young Jong ^a   Han, Il Keun ^a   Song, Yong Wook ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

DRAM capacitor; TIT capacitor; ZrO2 Al2O3 ZrO2 (ZAZ)

Indexed keywords

CAPACITORS; CRYSTALLINE MATERIALS; DIELECTRIC PROPERTIES; DYNAMIC RANDOM ACCESS STORAGE; OPTIMIZATION; ZIRCONIUM COMPOUNDS;

DRAM CAPACITORS; MIXTURE STRUCTURE; TIT CAPACITORS;

DIELECTRIC FILMS;

EID: 36249010882     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.030     Document Type: Article

References (5)

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4. Zhao X., and Vanderbilt D. Phonons and lattice dielectric properties of zirconia. Phys Rev B (2002) 075105
5. Yoon K.-R., Im K.V., Yeo J.H., Chung E.A., Kim Y.S., Yoo C.Y., et al. SSDM Ext Abstract (2005) 188-189