Resistive switching properties of Au/ZrO2/Ag structure for low-voltage nonvolatile memory applications

IEEE Electron Device Letters

Volumn 31, Issue 2, 2010, Pages 117-119

  Li, Yingtao ^a,b   Long, Shibing ^a   Zhang, Manhong ^a   Liu, Qi ^a   Shao, Lubing ^a   Zhang, Sen ^a   Wang, Yan ^a,b   Zuo, Qingyun ^a   Liu, Su ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

Nonvolatile memory; Resistance random access memory (RRAM); Resistive switching; ZrO2

Indexed keywords

DATA RETENTION; FAST SWITCHING; HIGH RESISTANCE; HIGH YIELD; LOW-VOLTAGE; MULTILEVEL STORAGE; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; OPERATION VOLTAGE; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; ROOM-TEMPERATURE PROCESS; TESTED DEVICES;

APPROXIMATION THEORY; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SILVER; SWITCHING SYSTEMS; ZIRCONIUM ALLOYS;

SWITCHING;

EID: 75749086328     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2036276     Document Type: Article

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