Resistive switching mechanism of TiO 2 thin films grown by atomic-layer deposition

Journal of Applied Physics

Volumn 98, Issue 3, 2005, Pages

  Choi, B J ^a   Jeong, D S ^a   Kim, S K ^a   Rohde, C ^a,b   Choi, S ^a   Oh, J H ^a   Kim, H J ^a   Hwang, C S ^a   Szot, K ^b   Waser, R ^b   Reichenberg, B ^b,c   Tiedke, S ^c  

^a Seoul National University   (South Korea)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c AIXACCT SYSTEMS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-LAYER DEPOSITION; CURRENT-VOLTAGE MEASUREMENTS; ELECTRIC PULSE; FILAMENTS;

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; POINT DEFECTS; THIN FILMS; TITANIUM DIOXIDE;

FILM GROWTH;

EID: 23944447615     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2001146     Document Type: Article

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