Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film

IEEE Electron Device Letters

Volumn 26, Issue 6, 2005, Pages 351-353

  Liu, Chih Yi ^a   Wu, Pei Hsun ^a   Wang, Arthur ^b   Jang, Wen Yueh ^b   Young, Jien Chen ^b   Chiu, Kuang Yi ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Conduction mechanism; Nonvolatile memory; Resistive switching memory; SrZrO3

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; FILMS; LEAKAGE CURRENTS; MIM DEVICES; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS;

CONDUCTION MECHANISM; LEAKAGE CURRENT DENSITY; MEMORY FILM; RESISTIVE SWITCHING MEMORY;

NONVOLATILE STORAGE;

EID: 20544436221     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.848073     Document Type: Article

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