Compositional and electrical properties of zirconium dioxide thin films chemically deposited on silicon

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 3, 2003, Pages 653-659

  Harasek, S ^a   Wanzenboeck, H D ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; ELECTRIC PROPERTIES; FILM GROWTH; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHYSICAL VAPOR DEPOSITION; SILICON; THICKNESS MEASUREMENT; ULTRATHIN FILMS;

ZIRCONIUM DIOXIDE; ZIRCONIUMTETRAKISTRIFLUOROACETYLACETONATE;

ZIRCONIUM COMPOUNDS;

EID: 0038613447     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1566786     Document Type: Article

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