Characteristics and processing effects of ZrO 2 thin films grown by metal-organic molecular beam epitaxy

Applied Surface Science

Volumn 227, Issue 1-4, 2004, Pages 387-398

  Kim, Myoung Seok ^a   Ko, Young Don ^a   Hong, Jang Hyuk ^a   Jeong, Min Chang ^a   Myoung, Jae Min ^a   Yun, Ilgu ^a  

^a Yonsei University   (South Korea)

Author keywords

Gate dielectric; MOMBE; Process modeling; Thin film; ZrO 2

Indexed keywords

ARGON; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; HIGH RESOLUTION ELECTRON MICROSCOPY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SILICA; ZIRCONIUM COMPOUNDS;

GATE DIELECTRIC; MOMBE; PROCESS MODELING; ZRO2;

THIN FILMS;

EID: 1842476917     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.12.017     Document Type: Article

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