Resistive switching mechanisms of V-doped SrZrO3 memory films

IEEE Electron Device Letters

Volumn 27, Issue 9, 2006, Pages 725-727

  Lin, Chun Chieh ^a   Tu, Bing Chung ^a   Lin, Chao Cheng ^a   Lin, Chen Hsi ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Conduction mechanism; Nonvolatile memory (NVM); Resistive random access memory (RRAM); Resistive switching; SrZrO3

Indexed keywords

NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SEMICONDUCTOR DOPING; SEMICONDUCTOR STORAGE; SWITCHING;

CONDUCTION MECHANISM; MEMORY FILMS; NONVOLATILE MEMORY (NVM); OHMIC CONDUCTION; RESISTIVE RAMDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING;

ELECTRON DEVICES;

EID: 33748484256     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.880660     Document Type: Article

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