Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layer

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1174-1177

  Congedo, G ^a   Lamperti, A ^a   Lamagna, L ^a   Spiga, S ^a  

^a LABORATORIO MDM   (Italy)

Author keywords

Charge trapping memories; Zirconium oxide

Indexed keywords

CHARGE TRAP; CHARGE TRAPPING MEMORIES; FABRICATED DEVICE; FLASH MEMORY CELL; FOWLER-NORDHEIM TUNNELING; MEMORY PERFORMANCE; METAL GATE; NON-VOLATILE MEMORIES; PHYSICAL ANALYSIS; PROCESS CONDITION; PROGRAM AND ERASE; REFERENCE DEVICES; THERMAL BUDGET; TRAPPING EFFICIENCIES; TUNNEL OXIDES;

ATOMIC LAYER DEPOSITION; FLASH MEMORY; SILICON COMPOUNDS; TANTALUM COMPOUNDS; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

CHARGE TRAPPING;

EID: 79958033520     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.066     Document Type: Conference Paper

References (15)

1. C.H. Lee, K.I. Choi, M.K. Cho, Y.H. Song, K.C. Park, K. Kim, in: Proc. IEDM Tech. Dig., 2003, p. 613.
2. K. Kim, in: Proc. IEDM Tech. Dig., 2005, p. 323.
3. International Technology Roadmap for Semiconductors 2009, http://www.itrs.net.
4. E. Vianello, M. Bocquet, F. Driussi, G. Molas, and L. Selmi Microelectron. Eng. 86 2009 1830
5. T. Lee, and S.K. Banerjee J. Vac. Sci. Technol. B 28 5 2010 1005
6. Y.-H. Wu, L.-L. Chen, Y.-S. Lin, M.-Y. Li, and H.-C. Wu IEEE El. Dev. Lett. 30 12 2009 1290
7. Y.-H. Wu, L.-L. Chen, J.-R. Wu, M.-L. Wu, C.-C. Lin, and C.-H. Chang IEEE El. Dev. Lett. 31 9 2010 1008
8. J.K. Park, Y. Park, S.K. Lim, J.S. Oh, M.S. Joo, K. Hong, and B.J. Cho Appl. Phys. Lett. 96 2010 222902
9. S. Spiga, G. Congedo, U. Russo, A. Lamperti, O. Salicio, F. Driussi, E. Vianello, in: Proc. ESSDERC, 2010, p. 408.
10. A. Lamperti, L. Lamagna, G. Congedo, S. Spiga, J. Electrochem. Soc. (in press).
11. M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukkra, and M.M. Heyns J. Appl. Phys. 87 2000 8615
12. G. Ghidini, N. Galbiati, E. Mascellino, C. Scozzari, A. Sebastiani, S. Amoroso, C. Monzio Compagnoni, A.S. Spinelli, A. Maconi, R. Piagge, A. Del Vitto, M. Alessandri, I. Baldi, R. Moltrasio, G. Albini, A. Grossi, P. Tessariol, E. Camerlenghi, and A. Mauri J. Vac. Sci. Technol. B 29 2011 01AE01
13. G. Congedo, S. Spiga, U. Russo, A. Lamperti, O. Salicio, E. Cianci, and M. Fanciulli J. Vac. Sci. Technol. B 29 2011 01AE04
14. S. M. Amoroso, A. Mauri, N. Galbiati, C. Scozzari, E. Mascellino, E. Camozzi, A. Rangoni, T. Ghilardi, A. Grossi, P. Tessariol, C. Monzio Compagnoni, A. Maconi, A.L. Lacaita, A.S. Spinelli, G. Ghidini, in: Proc. IRPS, 2010, p. 966.
15. A. Rotschild, L. Breuil, G. Van den bosch, O. Richard, T. Conard, A. Franquet, A. Cacciato, I. Debusschere, M. Jurczak, J. Van Houdt, J.A. Kittl, U. Ganguly, L. Date, P. Boelen, R. Schreutelkamp, Proc. ESSDERC, 2009, p. 272.