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IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 803-805

Unipolar resistive switching characteristics of a ZrO 2 memory device with oxygen ion conductor buffer layer

(2) Lee, Dai Ying a Tseng, Tseung Yuen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Oxygen ion migration; resistive random access memory (RRAM); unipolar switching; ZrO 2 film

Indexed keywords

CONDUCTING FILAMENT; DOPING CONCENTRATION; HIGH-SPEED SWITCHING; ION MIGRATION; NONDESTRUCTIVE READOUT; OXYGEN IONS; OXYGEN RESERVOIR; OXYGEN-ION CONDUCTIVITY; OXYGEN-ION CONDUCTOR; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SOFT ERROR; UNIPOLAR SWITCHING; VACANCY CONTENT;

BUFFER LAYERS; IONS; OXYGEN; PLATINUM; RANDOM ACCESS STORAGE; SEMICONDUCTOR DOPING; SWITCHING SYSTEMS; ZIRCONIA;

ZIRCONIUM ALLOYS;

EID: 84861710407 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/LED.2012.2192252 Document Type: Article

Times cited : (28)

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