Low-power and highly reliable multilevel operation in ZrO2 1T1R RRAM

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1026-1028

  Wu, Ming Chi ^a   Lin, Yi Wei ^a   Jang, Wen Yueh ^b   Lin, Chen Hsi ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Low power; multilevel; nonvolatile memory; resistive switching; resistive switching access memory (RRAM); ZrO2

Indexed keywords

LOW POWER; MULTILEVEL; NON-VOLATILE MEMORIES; RESISTIVE SWITCHING; ZRO2;

ELECTRIC FIELDS; LIMITERS; MEMORY ARCHITECTURE; MOSFET DEVICES; OXYGEN VACANCIES; PLATINUM; SWITCHING; SWITCHING SYSTEMS; TRANSISTORS; ZIRCONIUM ALLOYS;

STATIC RANDOM ACCESS STORAGE;

EID: 79960927820     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2157454     Document Type: Article

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