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Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

Maximizing performance for higher K gate dielectrics

(1) Robertson, John a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC CAPACITORS; CHARGE COUPLED DEVICES; DIELECTRIC MATERIALS; DIELECTRIC WAVEGUIDES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LOGIC CIRCUITS; LOGIC GATES; METALLIC COMPOUNDS; MOS CAPACITORS; MOS DEVICES; PERMITTIVITY; RARE EARTH ELEMENTS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS;

CHANNEL MOBILITIES; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DIELECTRIC CONSTANTS; EFFECTIVE OXIDE THICKNESSES; FLATBAND VOLTAGES; GATE STACKS; INTERFACIAL LAYERS; LANTHANIDE OXIDES;

GATE DIELECTRICS;

EID: 58149242281 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3041628 Document Type: Article

Times cited : (138)

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