Reproducible resistance switching in polycrystalline NiO films

Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5655-5657

  Seo, S ^a   Lee, M J ^a   Seo, D H ^a   Jeoung, E J ^a   Suh, D S ^a   Joung, Y S ^a   Yoo, I K ^a   Hwang, I R ^b   Kim, S H ^b   Byun, I S ^b   Kim, J S ^b   Choi, J S ^b   Park, B H ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Konkuk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEFECTS; LATTICE CONSTANTS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MATHEMATICAL MODELS; NEGATIVE RESISTANCE; NICKEL COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

COMPLIANCE CURRENT; ELECTRICAL TRANSPORT; LATTICE DISTORTION; MEMORY SWITCHING;

POLYCRYSTALLINE MATERIALS;

EID: 19944434155     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1831560     Document Type: Article

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