Enhanced dielectric properties of ZrO2 thin films prepared in nitrogen ambient by pulsed laser deposition

Journal of Physics D: Applied Physics

Volumn 36, Issue 4, 2003, Pages 389-393

  Zhu, J ^a   Li, T L ^a   Pan, B ^a   Zhou, L ^a   Liu, Z G ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CAPACITORS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC LOSSES; LEAKAGE CURRENTS; NITROGEN; PERMITTIVITY; PULSED LASER DEPOSITION; X RAY DIFFRACTION ANALYSIS; ZIRCONIA;

AMORPHOUS ZIRCONIA FILM; CAPACITANCE-VOLTAGE CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; LEAKAGE CURRENT DENSITY; ZIRCONIUM DIOXIDE;

THIN FILMS;

EID: 0037459110     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/4/310     Document Type: Article

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