Resistive switching characteristics of nickel silicide layer embedded HfO 2 film

Applied Physics Letters

Volumn 100, Issue 11, 2012, Pages

  Panda, Debashis ^a   Huang, Chun Yang ^a   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; EMBEDDED LAYERS; MEMORY PERFORMANCE; MEMORY STRUCTURE; METAL DIFFUSION; MODEL-BASED OPC; NICKEL SILICIDE; ON/OFF RATIO; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SILICIDE LAYERS; SWITCHING BEHAVIORS; SWITCHING PROPERTIES; TRANSMISSION ELECTRON; TWO-STACK;

AUGER ELECTRON SPECTROSCOPY; HAFNIUM OXIDES; PLATINUM; SWITCHING SYSTEMS;

SILICIDES;

EID: 84859939803     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694045     Document Type: Article

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